Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces

1. A vertically integrated microelectronic package, comprising:

a circuit platform having an upper surface and a lower surface opposite the upper surface thereof, the upper surface of the circuit platform having a wire bond-only surface area;

a first microelectronic device coupled to the upper surface of the circuit platform;

first wire bond wires coupled to and extending away from an upper surface of the first microelectronic device;

second wire bond wires coupled to the upper surface of the circuit platform in the wire bond-only surface area and coupled to the upper surface of the first microelectronic device;

a protective layer disposed over the circuit platform and the first microelectronic device, the protective layer having a lower surface and an upper surface opposite the lower surface thereof with the lower surface of the protective layer being in contact with the upper surface of the circuit platform, the upper surface of the protective layer having a surface mount-only area; and

a second microelectronic device in a face-down orientation coupled to upper ends of the first wire bond wires in the surface mount-only area, the second microelectronic device located above and at least partially overlapping the first microelectronic device.

2. The vertically integrated microelectronic package according to claim 1 , further comprising third wire bond wires coupled to and extending away from the upper surface of the circuit platform configured to provide an electric-magnetic interference shield.

3. The vertically integrated microelectronic package according to claim 2 , wherein the protective layer is disposed for surrounding at least portions of lengths of the first wire bond wires and the third wire bond wires and for covering the second wire bond wires.

4. The vertically integrated microelectronic package according to claim 2 , wherein at least a portion of the surface mount-only area corresponds to the wire bond-only surface area.

5. The vertically integrated microelectronic package according to claim 2 , further comprising:

a third microelectronic device coupled to the upper surface of the circuit platform in a face-up orientation in the wire bond-only surface area neighboring the first microelectronic device with a gap therebetween; and

lower ends of the third wire bond wires and the second wire bond wires coupled between the first microelectronic device and the third microelectronic device to the upper surface of the circuit platform.

6. The vertically integrated microelectronic package according to claim 1 , wherein the second microelectronic device includes a capacitor of 0.1 or more microfarads.

7. The vertically integrated microelectronic package according to claim 1 , wherein the second microelectronic device includes a capacitor coupled to the first microelectronic device for a frequency response of 1 or more GHz.

8. The vertically integrated microelectronic package according to claim 1 , wherein each of the second wire bond wires have approximately a nanohenry or less of self-inductance.

9. An inverted vertically integrated microelectronic package, comprising:

a circuit platform having an upper surface and a lower surface opposite the upper surface thereof, the lower surface of the circuit platform having a wire bond-only surface area;

a first microelectronic device coupled to the lower surface of the circuit platform;

first wire bond wires coupled to and extending away from a lower surface of the first microelectronic device;

a protective layer disposed under the circuit platform and the first microelectronic device, the protective layer having a lower surface and an upper surface opposite the lower surface thereof with the upper surface of the protective layer being in contact with the lower surface of the circuit platform, the lower surface of the protective layer having a surface mount-only area;

a second microelectronic device in a face-up orientation coupled to lower ends of the first wire bond wires in the surface mount-only area, the second microelectronic device located below and at least partially underlapping the first microelectronic device; and

second wire bond wires coupled to and extending away from the lower surface of the circuit platform in the wire bond-only surface area and coupled to the lower surface of the first microelectronic device.

10. The inverted vertically integrated microelectronic package according to claim 9 , further comprising third wire bond wires coupled to and extending away from the lower surface of the circuit platform configured to provide an electric-magnetic interference shield.

11. The inverted vertically integrated microelectronic package according to claim 10 , wherein the protective layer is disposed for surrounding at least portions of lengths of the first wire bond wires and the third wire bond wires and for covering the second wire bond wires.

12. The inverted vertically integrated microelectronic package according to claim 10 , wherein:

the protective layer is disposed to cover the lower surface of the first microelectronic device;

the upper surface of the protective layer being in contact with the lower surface of the circuit platform; and

interconnects coupled to the lower ends of the first wire bond wires and the third wire bond wires on the lower surface of the protective layer in the surface mount-only area.

13. The inverted vertically integrated microelectronic package according to claim 10 , further comprising:

a third microelectronic device coupled to the lower surface of the circuit platform in a face-down orientation in the wire bond-only surface area neighboring the first microelectronic device with a gap therebetween; and

upper ends of the third wire bond wires and the second wire bond wires coupled between the first microelectronic device and the third microelectronic device to the lower surface of the circuit platform.

14. The vertically integrated microelectronic package according to claim 9 , wherein the second microelectronic device includes a capacitor of 0.1 or more microfarads.

15. The vertically integrated microelectronic package according to claim 9 , wherein the second microelectronic device includes a capacitor coupled to the first microelectronic device for a frequency response of 1 or more GHz.

16. The vertically integrated microelectronic package according to claim 9 , wherein each of the second wire bond wires have approximately a nanohenry or less of self-inductance.

17. A microelectronic component, comprising:

a substrate having a first upper surface;

a conductive layer disposed on the first upper surface including wire bond pads and flip-chip pads respectively having first upper surfaces and second upper surfaces;

a solder mask disposed on the first upper surface between the wire bond pads and the flip-chip pads, the solder mask having a second upper surface disposed above the first upper surfaces and the second upper surfaces;

a eutectic layer disposed on the first upper surfaces and the second upper surfaces; and

first wire bond wires respectively bonded to the wire bond pads to provide an electric-magnetic interference shield.

18. The microelectronic component according to claim 17 , wherein the eutectic layer is configured to respectively cover each of the first upper surfaces without extending above the second upper surface of the solder mask.

19. The microelectronic component according to claim 18 , wherein the eutectic layer is configured to respectively cover each of the second upper surfaces without extending below the second upper surface of the solder mask.

20. The microelectronic component according to claim 19 , further comprising an integrated circuit die flip-chip interconnected with contacts thereof to portions of the eutectic layer corresponding to the second upper surfaces.