Memory arrays
Some embodiments include a memory array having rows of fins. Each fin has at least one channel region. Each channel region extends from a first source/drain region to a second source/drain region. The channel regions within each row of fins include first channel regions and second channel regions. Wordline configurations extend along the rows of fins. Each wordline configuration has a first wordline component operated in tandem with a second wordline component. The first wordline components electrically couple with only the first channel regions and the second wordline components electrically couple with only the second channel regions.
1. A memory array, comprising:
a first access transistor, wherein the first access transistor comprises first and second source/drain regions and a first channel region between the first and second source/drain regions;
a second access transistor, wherein the first and second access transistors are arranged in a first direction, and wherein the second access transistor comprises third and fourth source/drain regions and a second channel region between the third and fourth source/drain regions;
a first wordline extending in the first direction apart from each of the first and second access transistors, wherein the first wordline includes a first horizontal region and a first projection projecting vertically from a part of the first horizontal region, and wherein the first projection overlaps the first channel region such that current flow along the first channel region is controlled by the first projection; and
a second wordline extending in the first direction apart from each of the first and second access transistors, wherein the second wordline includes a second horizontal region and a second projection projecting vertically from a part of the second horizontal region, and wherein the second projection overlaps the second channel region such that current flow along the second channel region is controlled by the second projection.
2. The memory array of claim 1 , wherein the first and second wordlines are stacked vertically with each other, wherein the first projection projects downwardly from the part of the first horizontal region, and wherein the second projection projects upwardly from the part of the second horizontal region.
3. The memory array of claim 2 , wherein the second source-drain region of the first access transistor is formed in common to the third source-drain region of the second access transistor.
4. The memory array of claim 1 , wherein each of the first and second access transistors is arranged between the first and second wordlines, wherein the first projection projects downwardly from the part of the first horizontal region, and wherein the second projection projects downwardly from the part of the second horizontal region.
5. The memory array of claim 4 , wherein the second source-drain region of the first access transistor is formed in common to the third source-drain region of the second access transistor.
6. The memory array of claim 4 , wherein the second source-drain region of the first access transistor is formed separately from the third source-drain region of the second access transistor.
7. The memory array of claim 1 , wherein the first access transistor comprises a first fin and the second access transistor comprises a second fin, wherein the first fin comprises a first pedestal serving as the first source/drain region, a second pedestal serving as the second source/drain region and a first trough between the first and second pedestals to define the first channel region, and wherein the second fin comprises a third pedestal serving as the third source/drain region, a fourth pedestal serving as the fourth source/drain region and a second trough between the third and fourth pedestals to define the second channel region.
8. The memory array of claim 7 , wherein the second pedestal is common to the third pedestal.
9. The memory array of claim 7 , wherein the second pedestal is separated from the third pedestal.
10. The memory array of claim 7 , wherein the first trough is substantially the same in depth as the second trough.