Post chemical mechanical polishing formulations and method of use
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
1. A cleaning composition comprising at least one quaternary base present in an amount ranging from about 6% to about 10% by weight, at least one organic amine present in an amount ranging from about 1% to about 7% by weight, at least one corrosion inhibitor present in an amount ranging from about 0.05% to about 0.3% by weight, at least one complexing agent present in amount ranging from about 1% to 4% by weight, and at least one solvent, wherein the corrosion inhibitor is selected from the group consisting of 4-methylpyrazole, pyrazole, 2-amino-thiazole, 2-amino-1,3,4-thiadiazole, pterine, pyrazine, cytosine, pyridazine, derivatives thereof, and combinations thereof, and wherein the cleaning composition is substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide.
2. The cleaning composition of claim 1 , wherein the at least one organic amine comprises a species selected from the group consisting of aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, 1-amino-2-propanol, 3-amino-1-propanol, diisopropylamine, isopropylamine, 2-amino-1-butanol, isobutanolamine, other C 1 -C 8 alkanolamines, triethylenediamine, ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylamine, trimethylamine, 1-methoxy-2-aminoethane, tetraethylenepentamine (TEPA), 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA), glycine/ascorbic acid, iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, thiourea, 1,1,3,3-tetramethylurea, urea, urea derivatives, glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, piperadine, N-(2-aminoethyl) piperadine, proline, pyrrolidine, serine, threonine, tryptophan, tyrosine, valine, and combinations thereof.
3. The cleaning composition of claim 1 , wherein the at least one quaternary base comprises a species selected from the group consisting of tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tributylmethylammonium hydroxide (TBMAH), benzyltrimethylammonium hydroxide (BTMAH), choline hydroxide, tris(2-hydroxyethyl)methyl ammonium hydroxide, diethyldimethylammonium hydroxide, choline hydroxide, and combinations thereof.
4. The cleaning composition of claim 1 , wherein the at least one complexing agent comprises a species selected from the group consisting of acetic acid, acetone oxime, acrylic acid, adipic acid, alanine, arginine, asparagine, aspartic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutamic acid, glutamine, glutaric acid, glyceric acid, glycerol, glycolic acid, glyoxylic acid, histidine, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, maleic anhydride, malic acid, malonic acid, mandehc acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, ethylenediamine, oxalic acid, tannic acid, benzoic acid, ammonium benzoate, catechol, pyrogallol, resorcinol, hydroquinone, cyanuric acid, barbituric acid, 1,2-dimethylbarbituric acid, pyruvic acid, phosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), propanediol, benzohydroxamic acids, salts and derivatives thereof, and combinations thereof.
5. The cleaning composition of claim 1 , wherein the solvent comprises water.
6. The cleaning composition of claim 1 , further comprising residue and contaminants, wherein the residue comprises post-CMP residue, post-etch residue, post-ash residue, or combinations thereof.
7. The cleaning composition of claim 1 , wherein the composition is substantially devoid of at least one of oxidizing agents; fluoride-containing sources; abrasive materials; and combinations thereof.
8. A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition of claim 1 for sufficient time to at least partially clean said residue and contaminants from the microelectronic device.