Forming spacer for trench epitaxial structures
The disclosure relates to a structure and methods of forming spacers for trench epitaxial structures. The method includes: forming a spacer material between source and drain regions of respective first-type gate structures and second-type gate structures; growing source and drain material about the first-type gate structures, confined within an area defined by the spacer material; and growing source and drain material about the second-type gate structures, confined within an area defined by the spacer material.
1. A method, comprising:
forming a source and drain material about a plurality of first-type gate structures, confined within an area defined by a single spacer material; and
forming the source and drain material about a plurality of second-type gate structures, confined within the area defined by the single spacer material which separates the plurality of first-type of gate structures from the plurality of second-type of gate structures.
2. The method of claim 1 , further comprising:
forming additional spacer material on sidewalls of the first-type gate structures and the second-type gate structures and over a first capping layer; and
forming the single spacer material on a second capping layer in source and drain regions between the first-type gate structures and the second-type gate structures.
3. The method of claim 2 , wherein the single spacer material is a low-k dielectric material which defines trench structures for the source and drain material for the first-type gate structures and the second-type gate structures.
4. The method of claim 2 , wherein the additional spacer material is nitride or oxide material.
5. The method of claim 2 , wherein the forming source and drain material about the first-type gate structures and the second-type gate structures is an epitaxial growth process.
6. The method of claim 5 , wherein the forming source and drain material about the first-type gate structures is formed while blocking growth of material about the second-type gate structures.
7. The method of claim 6 , further comprising etching a mask over the first-type gate structures to expose the source and drain regions associated with the first-type gate structures, while protecting the source and drain regions of the second-type gate structures.
8. The method of claim 7 , wherein the first-type gate structures are p-type devices and the second-type gate structures are n-type devices.
9. The method of claim 5 , wherein the forming source and drain material about the second-type gate structures is formed while a mask blocks growth about the first-type gate structures.
10. The method of claim 9 , further comprising etching the mask over the second-type gate structures to expose the source and drain regions associated with the second-type gate structures, which is different than material deposited on the source and drain regions of the first-type gate structures after formation of the source and drain regions for the first-type gate structures.
11. The method of claim 1 , wherein the first-type gate structures are p-type devices and the second-type gate structures are n-type devices.
12. The method of claim 1 , wherein the first-type gate structures are p-type finFET devices and the second-type gate structures are n-type finFET devices.
13. The method of claim 1 , further comprising:
forming a first capping layer on the plurality of first-type gate structures and the plurality of second-type gate structures;
forming a first spacer material on sidewalls of the plurality of first-type gate structures and the plurality of second-type gate structures and over the first capping layer;
forming a second capping layer on the first spacer material; and
forming the single spacer material on the second capping layer between the plurality of first-type gate structures and the plurality of second-type gate structures.
14. The method of claim 13 , wherein the single spacer material defines trench structures for the source and drain material for the plurality of first-type gate structures and the plurality of second-type gate structures.
15. The method of claim 14 , wherein the growing the source and drain material about the first-type gate structures is formed while blocking growth of the source and drain material about the second-type gate structures.
16. The method of claim 1 , wherein the forming of the single spacer material is on a single side of two gate structures of the plurality of first-type gate structures and on a single side of two gate structures of the plurality of the second-type gate structures.
17. The method of claim 16 , wherein the two gate structures of the plurality of first-type gate structures are adjacent to respective ones of the two gate structures of the plurality of the second-type gate structures.