Memory device with a latching mechanism

1. A memory device, comprising:

a timing circuit configured to:

receive an input signal, wherein the input signal is one signal within a group of input signals that are communicated according to a sequence with each of the input signals individually corresponding to a portion of data, and

generate a timing signal based on the received input signal, wherein the timing signal corresponds to at least two portions of the data; and

a grouped latching circuit coupled to the timing circuit, the group latch configured to:

receive the timing signal and the at least two portions of the data, and

latch the at least two portions of the data according to the timing signal, wherein:

the at least two portions of the data correspond to the received input signal and at least one other signal within the group of input signals, and

the grouped latching circuit does not directly receive the group of input signals.

2. The memory device of claim 1 , wherein:

the timing circuit is configured to:

receive a first input signal and/or a second input signal sequentially following the first input signal, and

generate the timing signal corresponding to a nibble of the data associated with the first input signal and the second input signal, wherein the nibble includes a first data bit that corresponds to the first input signal and a second data bit that corresponds to the second input signal; and

the grouped latching circuit is configured to latch the nibble of the data directly based on the timing signal without directly receiving the first input signal and the second input signal.

3. The memory device of claim 2 , wherein:

the timing circuit includes:

a first clock circuit configured to generate a first timing signal corresponding to the nibble of the data, and

a second clock circuit configured to generate a second timing signal corresponding to a second nibble of the data associated with a third input signal and a fourth input signal, wherein the second nibble includes a third data bit that corresponds to the third input signal and a fourth data bit that corresponds to the fourth input signal; and

the grouped latching circuit includes:

a first group latch configured to latch the first data bit and the second data bit directly based on the first timing signal, and

a second group latch configured to latch the third data bit and the fourth data bit directly based on the second timing signal,

wherein:

the first group latch and the second group latch are configured to latch without directly receiving the third input signal and the fourth input signal.

4. The memory device of claim 3 , wherein:

the timing circuit further includes a third clock circuit configured to generate a third timing signal corresponding to cyclic redundancy check (CRC) information, wherein the CRC information includes a first CRC bit that corresponds to a fifth input signal and a second CRC bit that corresponds to a sixth input signal; and

the grouped latching circuit includes a third group latch configured to latch the first CRC bit and the second CRC bit directly based on the third timing signal,

wherein:

the group latching circuit is configured to latch without directly receiving the fifth input signal and the sixth input signal.

5. The memory device of claim 3 , wherein the timing circuit is configured to:

receive one or more pairs of consecutive input signals that are separated in time by an input separation; and

generate the first and second timing signals according to a timing signal separation that is greater than the input separation.

6. The memory device of claim 3 , wherein the timing circuit is configured to generate the first and second timing signals based on every other input signal.

7. The memory device of claim 1 , wherein the timing circuit is configured to generate one or more timing signals based on last occurring input signal within each groupings of the input signals.

8. The memory device of claim 7 , wherein the timing circuit is configured to ignore the input signals preceding the last signal in generating the one or more timing signals.

9. The memory device of claim 1 , wherein the at least two input signals can be a set of data strobe (DQS) signals.

10. The memory device of claim 1 , wherein the timing circuit and the group latching circuit are configured to process write data, read data, command data, address data, or a combination thereof.

11. The memory device of claim 1 , wherein the timing circuit includes one or more phase splitters.

12. The memory device of claim 11 , wherein the timing circuit does not include logic buffers.

13. The memory device of claim 1 , wherein the memory device is a dynamic random-access memory (DRAM) device configured according to a double data rate (DDR) interfacing scheme.

14. The memory device of claim 1 , wherein the memory device is a stacked device including a master die and a set of slave dies connected to each other using through silicon vias (TSVs).

15. A method of operating a memory device including a first die and a second die, the method comprising:

receiving an input signal at a timing circuit, wherein the input signal is one signal within a group of input signals that are communicated according to a sequence with each of the input signals individually corresponding to a portion of data;

using the timing circuit, generating a timing signal based on the received input signal, wherein the timing signal corresponds to at least two portions of the data;

receiving the timing signal and the at least two portions of the data at a grouped latching circuit; and

using the grouped latching circuit, latching the at least two portions of the data based on the timing signal and without directly receiving the group of input signals, wherein the at least two portions of the data correspond to the received input signal and at least one other signal within the group of input signals.

16. The method of claim 15 , wherein:

receiving the input signal includes receiving two or more of a first input signal, a second input signal, a third input signal, and a fourth input signal in sequence;

generating the timing signal includes:

generating a first timing signal corresponding to a first nibble of the data associated with the first input signal and the second input signal, wherein the nibble includes a first data bit that corresponds to the first input signal and a second data bit that corresponds to the second input signal, and

generating a second timing signal corresponding to a second nibble of the data associated with a third input signal and a fourth input signal, wherein the second nibble includes a third data bit that corresponds to the third input signal and a fourth data bit that corresponds to the fourth input signal; and

latching the at least two or more portions of the data includes, without directly using the first input signal, the second input signal, the third input signal, and the fourth input signal:

latching a first data bit and a second data bit directly based on the first timing signal, and

latching a third data bit and a fourth data bit directly based on the second timing signal.

17. The method of claim 16 , wherein:

receiving the at least two input signals includes receiving one or more pairs of consecutive input signals that are separated in time by an input separation; and

generating the timing signal includes generating the first and second timing signals according to a timing signal separation that is greater than the input separation.

18. The method of claim 16 , wherein generating the timing signal includes generating the first and second timing signals based on last occurring input signal within each grouping of the input signals.

19. The method of claim 18 , wherein generating the timing signal includes ignoring the input signals preceding the last signal in generating the one or more timing signals.

20. The method of claim 15 , wherein receiving the at least two input signals includes receiving a set of data strobe (DQS) signals.