Semiconductor package
A semiconductor package includes: a semiconductor chip having an active surface having connection pads disposed thereon; a connection member disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an underbump metallurgy (UBM) layer embedded in the passivation layer and electrically connected to the redistribution layer of the connection member, wherein the UBM layer includes a UBM pad embedded in the passivation layer, at least one plating layer disposed on the UBM pad and having side surfaces of which at least portions are covered by the UBM pad, and a UBM via penetrating through at least portions of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other.
1. A semiconductor package comprising:
a semiconductor chip having an active surface having connection pads disposed thereon;
a connection member disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads;
a passivation layer disposed on the connection member; and
an underbump metallurgy (UBM) layer embedded in the passivation layer and electrically connected to the redistribution layer of the connection member,
wherein the UBM layer includes
a UBM pad embedded in the passivation layer,
at least one plating layer disposed on the UBM pad such that a first surface of the at least one plating layer contacts the UBM pad and at least portions of side surfaces of the at least one plating layer, adjacent to and connecting to the first surface, are covered by the UBM pad, and
a UBM via penetrating through at least portions of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other.
2. The semiconductor package of claim 1 , wherein a lower surface of the plating layer is disposed on the same level as that of a lower surface of the passivation layer, and a lower surface of the UBM pad is disposed on a level above the lower surface of the plating layer.
3. The semiconductor package of claim 1 , wherein the UBM layer further includes a barrier layer disposed between the plating layer and the UBM pad.
4. The semiconductor package of claim 3 , wherein the barrier layer covers an upper surface and at least portions of the side surfaces of the plating layer.
5. The semiconductor package of claim 1 , wherein the plating layer includes a first plating, layer including gold (Au) and a second plating layer disposed between the first plating layer and the UBM pad and including nickel (Ni).
6. The semiconductor package of claim 1 , wherein the plating layer includes tin (Sn).
7. The semiconductor package of claim 6 , further comprising a copper post disposed on the plating layer.
8. The semiconductor package of claim 1 , wherein the UBM layer includes:
a first UBM layer including the UBM pad, the plating layer, and the UBM via; and
a second UBM layer consisting of the UBM pad and the UBM via.
9. The semiconductor package of claim 8 , further comprising a first connection terminal connected to the first UBM layer and a second connection terminal connected to the second UBM layer,
wherein the first and second connection terminals include different materials.
10. The semiconductor package of claim 9 , wherein the plating layer includes tin (Sn), and the first connection terminal is a copper post.
11. The semiconductor package of claim 1 , wherein a width of an upper surface of the UBM via in contact with the redistribution layer of the connection member is greater than a width of a lower surface thereof in contact with the UBM pad.
12. The semiconductor package of claim 1 , wherein the connection member is an organic interposer.
13. The semiconductor package of claim 1 , wherein the semiconductor chip includes a processor chip and a memory chip, and
the processor chip and the memory chip are electrically connected to each other through the connection member.
14. A semiconductor package comprising:
a semiconductor chip having an active surface having connection pads disposed thereon;
a connection member disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads;
a passivation layer disposed on the connection member;
an underbump metallurgy (UBM) pad embedded in the passivation layer and electrically connected to the redistribution layer of the connection member; and
at least one plating layer disposed on the UBM pad such that a first surface of the at least one plating layer and at least portions of side surfaces of the at least one plating layer, which are adjacent to and connect to the first surface, are covered by the UBM pad.
15. The semiconductor package of claim 14 , wherein the connection member includes an insulating layer in contact with the passivation layer, a first redistribution layer embedded in the insulating layer and in contact with the passivation layer, a second redistribution layer disposed on the insulating layer, and a via penetrating through at least portions of the insulating layer and electrically connecting the first redistribution layer and the second redistribution layer to each other, and
a width of an upper surface of the via in contact with the second redistribution layer is greater than a width of a lower surface thereof in contact with the first redistribution layer.
16. The semiconductor package of claim 14 , wherein a lower surface of the plating layer is disposed on the same level as a level of a lower surface of the passivation layer, and a lower surface of the UBM pad is disposed on a level above the lower surface of the plating layer.
17. A connection member for a semiconductor package, the connection member comprising:
a redistribution layer configured to electrically connect connection pads of a semiconductor chip with connection terminals;
a passivation layer disposed on the redistribution layer;
underbump metallurgy (UBM) pads embedded in the passivation layer and electrically connected to the redistribution layer; and
a plating layer disposed on each of the UBM pads such that a first surface of the plating layer and at least a portion of side surfaces of the plating layer, which are adjacent to and connect to the first surface, is covered by the corresponding UBM pad,
wherein the connection terminals are disposed on the UBM pads.
18. The connection member of claim 17 , further comprising:
UBM vias penetrating through the passivation layer and connecting the UBM pads to the redistribution layer,
wherein a width of a first surface of the UBM via in contact with the redistribution layer is greater than a width of a second surface, thereof in contact with the UBM pad.
19. The connection member of claim 17 , wherein the plating layer includes a first plating layer including gold (Au) and a second plating layer disposed between the first plating layer and the UBM pad and including nickel (Ni).
20. The semiconductor package of claim 1 , wherein the UBM layer is configured to physically connect to connection terminals,
the passivation layer having the UBM pad embedded therein has a first surface contacting the connection member, and a second surface opposite to the first surface and free of any passivation layer, and
the at least one plating layer is configured to physically connect to the connection terminals.