IP Library Granted Patent US 10,793,954
Granted Patent B2
US 10,793,954 · App. 15/976,468 · Granted Oct 6, 2020

PECVD process

Inventors: Nagarajan Rajagopalan (Santa Clara, CA); Xinhai Han (Santa Clara, CA); Michael Wenyoung Tsiang (Fremont, CA); Masaki Ogata (San Jose, CA); Zhijun Jiang (Sunnyvale, CA); Juan Carlos Rocha-Alvarez (San Carlos, CA); Thomas Nowak (Cupertino, CA); Jianhua Zhou (Campbell, CA); Ramprakash Sankarakrishnan (Santa Clara, CA); Amit Kumar Bansal (Milpitas, CA); Jeongmin Lee (Sunnyvale, CA); Todd Egan (Fremont, CA); Edward Budiarto (Fremont, CA); Dmitriy Panasyuk (Santa Clara, CA); Terrance Y. Lee (Oakland, CA); Jian J. Chen (Fremont, CA); Mohamad A. Ayoub (Los Gatos, CA); Heung Lak Park (San Jose, CA); Patrick Reilly (Pleasanton, CA); Shahid Shaikh (Santa Clara, CA); Bok Hoen Kim (San Jose, CA); Sergey Starik (Kiev, UA); Ganesh Balasubramanian (Sunnyvale, CA)
Assignee: Applied Materials, Inc.
C23C16/52C23C16/458C23C16/4557C23C16/45565C23C16/46C23C16/50C23C16/505C23C16/509C23C16/5096G01B11/0625G01B11/0683G01N21/55G01N21/658H01L21/00H01L21/67248H01L21/67253H01L21/687G01N2201/1222
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,793,954
App. No.
15/976,468
Granted
Oct 6, 2020
Kind
B2
Abstract

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Claims (40)

1. A lid for a semiconductor processing apparatus, the lid comprising:

a gas distributor having a plurality of gas flow openings formed therethrough;

a metrology device that directs and receives light through one of the gas flow openings, wherein the metrology device comprises a collimator with a fiber optic light source;

a first plate coupled to the gas distributor, wherein the collimator is disposed through an opening in the first plate, and the opening provides a gap that allows lateral motion of the collimator; and

a seating plate between the first plate and the gas distributor, the seating plate comprising a recess aligned with the gas flow opening, wherein the collimator is seated in the recess.

2. The lid of claim 1 , further comprising a plurality of fasteners that couple the collimator to the first plate, each fastener comprising a resilient member.

3. The lid of claim 1 , further comprising a gas distributor heater capable of heating a periphery of the gas distributor.

4. A lid for a semiconductor processing apparatus, the lid comprising:

a gas distributor having a plurality of gas flow openings formed therethrough;

a metrology device that directs and receives light through one of the gas flow openings;

a first zoned plate, wherein the metrology device comprises a fiber optic and a collimator that houses the fiber optic, and the collimator is disposed through an opening in the first zoned plate; and

a seating plate between the first zoned plate and the gas distributor, wherein an extension of the collimator is seated in the seating plate.

5. The lid of claim 4 , further comprising a second zoned plate between the seating plate and the gas distributor, wherein the second zoned plate has a plurality of openings, and each opening of the second zoned plate is aligned with a gas flow opening of the gas distributor.

6. The lid of claim 4 , wherein the extension of the collimator is seated in a recess formed in the seating plate, and the recess has a slanted wall.

7. A lid for a semiconductor processing apparatus, the lid comprising:

a gas distributor having a plurality of gas flow openings formed therethrough;

a metrology device that directs and receives light through one of the gas flow openings; and

a zoned plate having a gas flow opening aligned with a gas flow opening of the gas distributor, wherein the metrology device directs and receives light through the gas flow openings of the zoned plate and the gas distributor.

8. The lid of claim 7 , further comprising a second zoned plate, wherein the metrology device includes a collimator that fits an opening in the second zoned plate.

9. The lid of claim 8 , wherein the collimator does not contact the second zoned plate when disposed in the opening of the second zoned plate.

10. A lid for a semiconductor processing apparatus, the lid comprising:

a gas distributor having a plurality of gas flow openings formed therethrough;

a metrology device that directs and receives light through one of the gas flow openings; and

a first zoned plate and a second zoned plate, wherein:

an opening is formed in the second zoned plate,

the metrology device comprises a fiber optic and a collimator housing the fiber optic, and

the collimator fits the opening in the second zoned plate.

11. A lid assembly for a semiconductor processing apparatus, the lid assembly comprising:

a conductive gas distributor having a plurality of gas distributor openings;

a first zoned plate comprising:

one or more first plenums; and

a first plurality of openings, wherein the first plurality of openings are in fluid communication with a first subset of the gas distributor openings; and

a metrology device seated in the first zoned plate and in optical alignment with one of the first plurality of openings.

12. The lid assembly of claim 11 , further comprising a second zoned plate comprising:

one or more second plenums; and

a second plurality of openings, wherein the second plurality of openings are in fluid communication with a second subset of the gas distributor openings, and the first subset is distinct from the second subset.

13. The lid assembly of claim 12 , further comprising a gas cap having portals, wherein:

the gas cap is in contact with the second zoned plate,

a first plurality of the portals are in fluid contact with the one or more first plenums, and

a second plurality of the portals are in fluid contact with the one or more second plenums.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2018
From: RAJAGOPALAN, NAGARAJAN; HAN, XINHAI; TSIANG, MICHAEL WENYOUNG; OGATA, MASAKI; JIANG, ZHIJUN; ROCHA-ALVAREZ, JUAN CARLOS; NOWAK, THOMAS; ZHOU, JIANHUA; SANKARAKRISHNAN, RAMPRAKASH; BANSAL, AMIT KUMAR; LEE, JEONGMIN; EGAN, TODD; BUDIARTO, EDWARD; PANASYUK, DMITRIY; LEE, TERRANCE Y.; CHEN, JIAN J.; AYOUB, MOHAMAD A.; PARK, HEUNG LAK; REILLY, PATRICK; SHAIKH, SHAHID; KIM, BOK HOEN; STARIK, SERGEY; BALASUBRAMANIAN, GANESH
To: APPLIED MATERIALS, INC.
Reel/Frame 046154/0240 →
Continuity (8)
Continuation 15802496 · Nov 3, 2017
Continuation 15278455 · Sep 28, 2016
Continuation 14869371 · Sep 29, 2015
Continuation 14056203 · Oct 17, 2013
Provisional Application 61761515 · Feb 6, 2013
Provisional Application 61738247 · Dec 17, 2012
Provisional Application 61719319 · Oct 26, 2012
Related Publication 20180258535A1 · Sep 13, 2018