Enhancing nucleation in phase-change memory cells
View Patent ↗Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.
1. A method of programming phase-change memory (PCM) cells within a memory array, the method comprising:
applying a nucleation signal to selected ones of the PCM cells to form nucleation sites within the selected ones of the PCM cells, the nucleation sites being a pre-structural ordering of molecules of PCM material within the selected PCM cells occurring prior to the molecules being placed in a crystalline growth phase; and
waiting a non-zero-time period prior to subsequently applying a programming signal to achieve a desired level of crystallinity within the selected ones of the PCM cells.
2. The method of claim 1 , further comprising making a determination of a time period over which to apply the nucleation signal to the selected ones of the PCM cells prior to applying the programming signal.
3. The method of claim 1 , further comprising providing a wide current window in which to form nucleation regions during a nucleation phase.
4. The method of claim 1 , further comprising selecting the nucleation signal to have a variable rising-edge increasing in amplitude over a non-zero timeframe.
5. The method of claim 1 , wherein at least a portion of the nucleation signal includes a signal portion having a non-zero ramp-up time having a variable rising-edge signal.
6. The method of claim 5 , wherein the non-zero ramp-up time is substantially longer than a practical lower limit of a ramp-up time.
7. The method of claim 5 , wherein the signal portion having the non-zero rising-edge time having the variable rising-edge signal is followed by a plateau-region signal portion of the nucleation signal.
8. The method of claim 1 , wherein at least a portion of the nucleation signal comprises a non-zero rising-edge signal applied prior to application of the subsequent programming signal.
9. The method of claim 8 , wherein the signal portion having the non-zero rising-edge time includes a step-wise incremental signal.
10. The method of claim 8 , wherein the signal portion having the non-zero rising-edge time is followed by applying a plateau-region signal portion of the nucleation signal.
11. The method of claim 10 , wherein the signal portion having the non-zero rising-edge time is followed by a time period prior to applying the plateau-region signal portion of the nucleation signal.
12. The method of claim 8 , wherein an amplitude of the signal portion having a non-zero rising-edge time has a maximum amplitude that is different from an amplitude of the plateau-region signal portion of the nucleation signal.
13. The method of claim 8 , wherein an amplitude of the signal portion having a non-zero rising-edge time has a maximum amplitude that is substantially the same as an amplitude of the plateau-region signal portion of the nucleation signal.
14. The method of claim 1 , further comprising applying a SET programming signal to at least a portion of the selected ones of the PCM cells subsequent to applying the nucleation signal.
15. The method of claim 14 , further comprising making a determination of a time period between application of the nucleation signal and the SET programming signal.
16. The method of claim 1 , further comprising selecting an amplitude of the nucleation signal to form crystal nucleation-sites during the nucleation phase inside amorphous ones of the selected ones of the PCM cells.
17. An apparatus to program a phase-change memory (PCM) cells within a memory array, the apparatus comprising:
at least one signal generator configured to apply a nucleation signal to selected ones of the PCM cells to form nucleation sites within molecules of PCM material within the selected ones of the PCM cells, the nucleation sites being a state of pre-structural ordering of the molecules of the PCM material within the selected PCM cells prior to the molecules being placed in a crystalline-growth phase, and
the at least one signal generator further configured to apply a programming signal after a non-zero-time period of the application of the nucleation signal to achieve a desired level of crystallinity within the selected ones of the PCM cells.
18. The apparatus of claim 17 , wherein the at least one signal generator is further configured to generate a non-zero timeframe rising-edge of the nucleation signal as a step-wise incremental signal.
19. The apparatus of claim 17 , wherein the at least one signal generator is further configured to generate at least a portion of the nucleation signal to include a signal portion having a variable non-zero ramp-up time.
20. A method of programming a number of phase-change memory (PCM) cells within a memory array, the method comprising:
applying a nucleation signal to selected ones of the number of PCM cells to form nucleation sites, the nucleation sites being a pre-structural ordering of molecules of PCM material within the selected PCM cells occurring prior to the molecules being placed in a crystalline growth phase, and
waiting a non-zero time period prior to a subsequent application of a programming signal to selected ones of the selected PCM cells.