Adaptive scan frequency for detecting errors in a memory system
Performing a first set of scans on a memory device in a memory system with a first time interval between each scan of the first set of scans to detect errors on the memory device, determining, from performing the first set of scans, that a rate of errors being detected on the memory device is changing, and performing a second set of scans with a second time interval between each scan of the second set of scans to detect errors on the memory device, in response to determining that the rate of errors being detected on the memory device is changing, wherein the second time interval is different than the first time interval.
1. A method, comprising:
performing a first set of scans on a memory device in a memory system with a first time interval between each scan of the first set of scans to detect errors on the memory device;
determining, from performing the first set of scans, a first rate of errors as a ratio of errors detected to a first number of scans of the first set of scans and a second rate of errors as a ratio of errors detected to a second number of scans of the first set of scans;
determining, from performing the first set of scans, that a rate of errors being detected on the memory device is changing by comparing the first rate of errors to the second rate of errors; and
performing a second set of scans with a second time interval between each scan of the second set of scans to detect errors on the memory device, in response to determining, from performing the first set of scans, that the rate of errors being detected on the memory device is changing, wherein the second time interval is different than the first time interval.
2. The method of claim 1 , wherein the second time interval is less than the first time interval, in response to determining that the rate of errors being detected on the memory device is changing with increasing frequency.
3. The method of claim 1 , wherein the second time interval is greater than the first time interval, in response to determining that the rate of errors being detected on the memory device is changing with decreasing frequency.
4. The method of claim 1 , wherein performing the second set of scans comprises performing the second set of scans with the second time interval on a section of the memory device.
5. The method of claim 1 , wherein the first set of scans is performed with the first time interval on a section of the memory device and the second set of scans is performed with the second time interval on a different section of the memory device.
6. The method of claim 1 , further comprising:
determining that the rate of errors that are being detected on a section of the memory device meets a threshold; and
retiring the section of the memory device in response to determining that a rate of errors that are being detected on the section meets the threshold.
7. The method of claim 1 , further comprising:
adjusting trim settings for the memory device in response to determining that the rate of errors being detected on the memory device is changing.
8. The method of claim 1 , wherein the memory system is a solid-state drive.
9. A system, comprising:
a memory device; and
a processing device coupled to the memory device, wherein the processing device is configured to:
perform a first number of scans with a first time interval between each of the first number of scans to detect errors on the memory device;
detect a rate of errors as a ratio of errors detected to the first number of scans; and
perform a second number of scans with a second time interval between each of the second number of scans to detect errors on the memory device, in response to detecting that the rate of errors being detected on the memory device meets a threshold.
10. The system of claim 9 , wherein the second time interval is less than the first time interval, in response to detecting that the rate of errors being detected on the memory device is changing with increasing frequency.
11. The system of claim 9 , wherein the second time interval is greater than the first time interval, in response to detecting that the rate of errors being detected on the memory device is changing with decreasing frequency.
12. The system of claim 9 , wherein the processing device is further configured to perform the second number of scans in a section of the memory device, in response to detecting that a rate of errors being detected on the section of the memory device meets the threshold.
13. The system of claim 9 , wherein the first set of scans is performed with the first time interval on a section of the memory device and the second set of scans is performed with the second time interval on a different section of the memory device.
14. The system of claim 9 , wherein the processing device is further configured to retire a section of the memory device, in response to detecting that a rate of errors that are being detected on the section meets a threshold.
15. The system of claim 9 , wherein the processing device is further configured to adjust trim settings for the memory device, in response to detecting that the rate of errors being detected on the memory device is changing.
16. The system of claim 9 , wherein the system is a solid-state drive.
17. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
perform a first set of scans on a memory device in a memory system with a first time interval between each scan of the first set of scans to detect errors on the memory device;
determine, from performing the first set of scans, a first rate of errors as a ratio of errors detected to a first number of scans of the first set of scans and a second rate of errors as a ratio of errors detected to a second number of scans of the first set of scans;
determine, from performing the first set of scans, that a rate of errors being detected on the memory device is changing by comparing the first rate of errors to the second rate of errors; and
perform a second set of scans with a second time interval between each scan of the second set of scans to detect errors on the memory device, in response to determining, from performing the first set of scans, that the rate of errors being detected on the memory device is changing, wherein the second time interval is different than the first time interval.
18. The non-transitory computer-readable storage medium of claim 17 , wherein the second time interval is less than the first time interval, in response to determining that the rate of errors being detected on the memory device is changing with increasing frequency, and the second time interval is greater than the first time interval, in response to determining that the rate of errors being detected on the memory device is changing with decreasing frequency.
19. The non-transitory computer-readable storage medium of claim 17 , wherein the first set of scans is performed with the first time interval on a section of the memory device and the second set of scans is performed with the second time interval on a different section of the memory device.
20. The non-transitory computer-readable storage medium of claim 17 , wherein the processing device is further configured to:
adjust trim settings for the memory device in response to determining that the rate of errors being detected on the memory device is changing.