Semiconductor substrate singulation systems and related methods

1. A method of thinning a semiconductor substrate, the method comprising:

providing a semiconductor substrate having a first surface and second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface;

inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer;

inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer;

applying ultrasonic energy to the semiconductor substrate; and

separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer using only the ultrasonic energy.

2. The method of claim 1 , wherein the first surface includes a plurality of semiconductor devices formed therein.

3. The method of claim 1 , further comprising backgrinding the three thinned separate portions on those surfaces of the three separate thinned portions that faced one of the first damage layer and the second damage layer.

4. The method of claim 1 , wherein the semiconductor substrate is silicon carbide.

5. The method of claim 1 , further comprising:

inducing damage into a portion of the semiconductor substrate at a third depth into the thickness forming a third damage layer; and

wherein separating the semiconductor substrate further comprises separating into separate thinned portions across the thickness along the first damage layer, along the second damage layer, and along the third damage layer.

6. The method of claim 1 , wherein the first depth into the thickness is greater than the second depth.

7. The method of claim 1 , wherein the second depth into the thickness is greater than the first depth.

8. A method of forming semiconductor substrates, the method comprising:

providing a boule comprising a semiconductor material having a first surface thereon;

inducing damage into a portion of the boule at a first depth into the boule from the first surface forming a first damage layer;

inducing damage into a portion of the boule at a second depth into the boule from the first surface forming a second damage layer;

applying ultrasonic energy to the boule; and

separating semiconductor substrates from the boule along the first damage layer and along the second damage layer using only the ultrasonic energy.

9. The method of claim 8 , further comprising backgrinding the semiconductor substrates on those surfaces of the semiconductor substrates that faced one of the first damage layer and the second damage layer.

10. The method of claim 8 , wherein the boule comprises silicon carbide.

11. The method of claim 8 , further comprising:

inducing damage into a portion of the boule at a third depth into the boule from the first surface forming a third damage layer; and

wherein separating semiconductor substrates further comprises separating semiconductor substrates along the first damage layer, along the second damage layer, and along the third damage layer.

12. The method of claim 8 , wherein the first depth into the thickness is greater than the second depth.

13. The method of claim 8 , wherein the second depth into the thickness is greater than the first depth.

14. A method of thinning a semiconductor substrate for reuse, the method comprising:

providing a semiconductor substrate comprising a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface, the first surface including a plurality of semiconductor devices thereon;

inducing damage into a portion of the semiconductor substrate at a depth into the thickness forming a damage layer;

applying ultrasonic energy to the semiconductor substrate;

separating the semiconductor substrate into two thinned portions across the thickness along the first damage layer using only the ultrasonic energy, a first one of the two thinned portions comprising the plurality of semiconductor devices; and

forming one or more semiconductor devices on a second one of the two thinned portions.

15. The method of claim 14 , further comprising backgrinding the two thinned portions on those surfaces of the two thinned portions that faced the first damage layer.

16. The method of claim 14 , wherein the semiconductor substrate is silicon carbide.

17. The method of claim 14 , wherein separating the semiconductor substrate further comprises applying bias force to one of the first surface, the second surface, and both the first surface and the second surface while one of applying ultrasonic energy to the semiconductor substrate and after applying ultrasonic energy to the semiconductor substrate.

18. The method of claim 14 , further comprising:

inducing damage into a portion of the second one of the two thinned semiconductor substrates at a depth into a thickness of the thinned semiconductor substrate forming a damage layer;

applying ultrasonic energy to the second one of the two thinned semiconductor substrates;

separating the second one of the two thinned semiconductor substrates into two thinned portions across the thickness along the damage layer, a first one of the two thinned portions comprising the plurality of semiconductor devices formed on the second one of the two thinned semiconductor substrates; and

forming one or more semiconductor devices on a second one of the two thinned portions.