APPARATUSES AND METHODS FOR PIN CAPACITANCE REDUCTION INCLUDING BOND PADS AND CIRCUITS IN A SEMICONDUCTOR DEVICE
Apparatuses and methods for including bond pads and circuits in a semiconductor device are disclosed. An example apparatus includes a bond pad including one or more metal layers and one or more circuits. The circuits include one or more layers overlapped with the bond pad and coupled to metal layers of the bond pad. The pin capacitance can be reduced by overlapping of related layers and minimizing the areas of the unrelated layers.
1 . An apparatus, comprising:
a bond pad including a metal layer; and
a circuit comprising:
a first metal layer comprising a first portion overlapped with the bond pad and a second portion extending from the first portion to outside of the bond pad; and
a second metal layer different from the first metal layer, the second metal layer comprising a U-shape portion entirely overlapped with the bond pad, wherein the U-shape portion is further coupled to the first portion of the first metal layer at a first end of the U-shape portion.
2 . (canceled)
3 . (canceled)
4 . The apparatus of claim 1 further comprising:
a third layer overlapped with the bond pad, wherein the third layer comprises a portion also overlapped with the bond pad and coupled to a second end of the U-shape portion of the second metal layer.
5 . (canceled)
6 . The apparatus of claim 4 , wherein the third layer is at least a portion of a source/drain of a transistor or a gate of a transistor.
7 . The apparatus of claim 4 , wherein the third layer is at least a portion of an input driver or an output driver of a memory.
8 . The apparatus of claim 4 , wherein the third layer is at least a portion of an electro-static protection circuit.
9 . The apparatus of claim 4 further comprising an interconnect that couples the second layer to the third layer, wherein the interconnect is overlapped with the bond pad and is positioned at an edge of the bond pad.
10 . An apparatus, comprising:
a bond pad including a metal layer; and
a circuit comprising:
a first layer comprising a first portion overlapped with the bond pad and a second portion extending from the first portion to outside the bond pad;
a metal layer comprising a U-shape portion overlapped with the bond pad; and
a transistor layer comprising a first portion overlapped with the bond pad and a second portion extending from the first portion to outside the bond pad;
wherein the first portion of the first layer is overlapped with a first end of the U-shape portion of the metal layer and the first portion of the transistor layer is overlapped with a second end of the U-shape portion of the metal layer, and wherein the first end and the second end of the U-shape portion of the metal layer are overlapped with the bond pad.
11 . The apparatus of claim 10 , wherein each of the first portion of the first layer or the first portion of the transistor layer is positioned at an edge of the bond pad.
12 . (canceled)
13 . The apparatus of claim 10 further comprising a second metal layer comprising a first portion overlapped with the bond pad and coupled to the first layer and the metal layer of the bond pad.
14 . The apparatus of claim 10 , wherein the transistor layer is partially overlapped with the bond pad.
15 . The apparatus of claim 10 , wherein the transistor layer includes a gate or a source/drain.
16 . The apparatus of claim 10 , wherein the transistor layer is a part of a protection circuit.
17 . The apparatus of claim 10 , wherein the transistor layer is a part of an input driver or a part of an output driver of a memory.
18 . An apparatus, comprising:
a bond pad including a metal layer; and
a circuit comprising:
a first component that is entirely overlapped with the bond pad, wherein the first component is of a U-shape;
a second component overlapped with a first end of the U-shape of the first component; and
a third component overlapped with a second end of the U-shape of the first component.
19 . The apparatus of claim 18 , wherein the first component is a resistor.
20 . The apparatus of claim 18 , wherein:
the first component is coupled to the second component and the third component via a conductive via or a interconnect; and
one or both of the second component and the third component is partially overlapped with the bond pad.
21 . The apparatus of claim 20 , wherein the conductive via or the interconnect is inside an overlapped area of the bond pad, and wherein the conductive via or the local interconnect is positioned at an edge of the bond pad.
22 . The apparatus of claim 18 further comprising a metal layer coupled to the first component and the bond pad, wherein the metal layer is overlapped with the bond pad.