Multi-level semiconductor memory device and structure
A multilevel semiconductor device including: a first level including a first array of first memory cells and first control line; a second level including a second array of second memory cells and second control line; a third level including a third array of third memory cells and third control line, where the second level overlays the first, and where the third level overlays the second; a first, second and third access pillar; memory control circuits designed to individually control cells of the first, second and third memory cells, where the device includes an array of units, where each of the units includes a plurality of the first, second and third memory cells, and a portion of the memory control circuits, where the array of units include at least eight rows and eight columns of units, and where the memory control is designed to control independently each of the units.
1. A multilevel semiconductor device, the device comprising:
a first level comprising a first array of first memory cells and a first control line;
a second level comprising a second array of second memory cells and a second control line;
a third level comprising a third array of third memory cells and a third control line,
wherein said second level overlays said first level, and
wherein said third level overlays said second level;
a first access pillar;
a second access pillar;
a third access pillar; and
memory control circuits designed to individually control cells of said first memory cells, said second memory cells and said third memory cells,
wherein said device comprises an array of units,
wherein each of said units comprises a plurality of said first memory cells, a plurality of said second memory cells, a plurality of said third memory cells, and a portion of said memory control circuits,
wherein said array of units comprise at least eight rows and eight columns of units, and
wherein said memory control is designed to control independently each of said units.
2. The device according to claim 1 ,
wherein at least one of said first memory cells is self-aligned to at least one of said second memory cells.
3. The device according to claim 1 ,
wherein at least one of said first memory cells is self-aligned to at least one of said third memory cells.
4. The device according to claim 1 ,
wherein said memory cells comprise a charge trap structure or a floating gate structure.
5. The device according to claim 1 ,
wherein at least a portion of said memory control circuits is disposed underneath said first level or overlaying said third level.
6. The device according to claim 1 , further comprising:
a feed-through conductive path through said first level, said second level and said third level.
7. The device according to claim 1 ,
wherein said second access pillar comprises an electrically activated contact to said second control line.
8. A multilevel semiconductor device, the device comprising:
a first level comprising a first array of first memory cells and a first control line;
a second level comprising a second array of second memory cells and a second control line;
a third level comprising a third array of third memory cells and a third control line,
wherein said second level overlays said first level, and
wherein said third level overlays said second level;
a first access pillar;
a second access pillar;
a third access pillar; and
memory control circuits designed to individually control cells of said first memory cells, said second memory cells and said third memory cells,
wherein said device comprises an array of units,
wherein each of said units comprises a plurality of said first memory cells, a plurality of said second memory cells, a plurality of said third memory cells, and a portion of said memory control circuits,
wherein said array of units comprise at least four rows and four columns of units, and
wherein said memory control is designed to control independently each of said units.
9. The device according to claim 8 ,
wherein at least one of said first memory cells is self-aligned to at least one of said second memory cells.
10. The device according to claim 8 ,
wherein at least one of said first memory cells is self-aligned to at least one of said third memory cells.
11. The device according to claim 8 ,
wherein said memory cells comprise a charge trap structure or a floating gate structure.
12. The device according to claim 8 ,
wherein at a least portion of said memory control circuits is disposed underneath said first level or overlaying said third level.
13. The device according to claim 8 , further comprising:
a feed-through conductive path through said first level, said second level and said third level.
14. The device according to claim 8 ,
wherein said second access pillar comprises an electrically activated contact to said second control line.
15. A multilevel semiconductor device, the device comprising:
a first level comprising a first array of first memory cells,
a second level comprising a second array of second memory cells,
a third level comprising a third array of third memory cells,
wherein said second level overlays said first level, and
wherein said third level overlays said second level; and
memory control circuits designed to individually control cells of said first memory cells, said second memory cells and said third memory cells,
wherein said device comprises an array of units,
wherein each of said units comprises a plurality of said first memory cells, a plurality of said second memory cells, a plurality of said third memory cells, and a portion of said memory control circuits,
wherein said array of units comprises at least four rows and four columns of units, and
wherein said memory control is designed to control independently each of said units.
16. The device according to claim 15 ,
wherein at least one of said first memory cells is self-aligned to at least one of said third memory cells.
17. The device according to claim 15 ,
wherein said memory cells comprise a charge trap structure or a floating gate structure.
18. The device according to claim 15 ,
wherein at least a portion of said memory control circuits is disposed underneath said first level or overlaying said third level.
19. The device according to claim 15 , further comprising:
a feed-through conductive path through said first level, said second level and said third level.
20. The device according to claim 15 , further comprising:
a plurality of access pillars,
wherein said second level comprises a second control line, and
wherein at least one of said access pillars comprises an electrically activated contact to said second control line.