Solid-state image pickup device and manufacturing method thereof
There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.
1. An electronic apparatus, comprising:
a solid-state image pickup device, comprising:
a functional region provided with an organic film;
a guard ring, wherein the guard ring includes a first guard ring provided at a region surrounding the functional region;
a bonding pad that is provided at a peripheral region around the functional region;
an insulating film that is provided around the functional region; and
a passivation film that covers a top surface of the functional region and a top surface of the insulating film, wherein the guard ring is configured of the passivation film cladded at an inside of a groove that is provided on the insulating film; and
an aperture that is provided at a position facing the bonding pad.
2. The electronic apparatus according to claim 1 , wherein the guard ring includes:
a second guard ring surrounding the aperture; and
a third guard ring along an outer circumference of a chip.
3. The electronic apparatus according to claim 2 , wherein the second guard ring is provided across a plurality of apertures.
4. The electronic apparatus according to claim 1 , wherein the guard ring is configured of a material film that is not permeable to moisture and oxygen.
5. The electronic apparatus according to claim 1 , wherein the guard ring has a configuration in which one or more metallic layers are laminated around the functional region.
6. The electronic apparatus according to claim 5 , wherein the one or more metallic layers are configured of aluminum, tungsten, titanium, molybdenum, tantalum, copper, an alloy film of aluminum, tungsten, titanium, molybdenum, tantalum, copper, or a silicon- or oxygen-containing metallic film of aluminum, tungsten, titanium, molybdenum, tantalum, and copper.
7. The electronic apparatus according to claim 5 , further comprising the passivation film is cladded directly on an uppermost layer configuring the guard ring.
8. The solid-state image pickup device according to claim 7 , wherein the passivation film is configured of a material film that is not permeable to moisture and oxygen.
9. The solid-state image pickup device according to claim 8 , wherein the passivation film is configured of a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, or a laminated film stacking a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film.
10. The solid-state image pickup device according to claim 1 , further comprising:
a semiconductor substrate on which the functional region is provided on a principal surface side thereof;
a charge transmission section that is provided inside the semiconductor substrate; and
a multi-layer wire that is provided on an opposite side of the principal surface of the semiconductor substrate and is connected with the bonding pad, wherein the charge transmission section transmits a signal charge that is photoelectric-converted by the organic film or a potential corresponding to a signal charge to the bonding pad via the multi-layer wire.
11. A solid-state image pickup device, comprising:
a functional region provided with an organic film;
a guard ring, wherein the guard ring includes a first guard ring provided at a region surrounding the functional region;
an insulating film around the functional region, wherein the guard ring is configured of an embedded layer that is embedded into an inside of a groove that is provided on the insulating film; and
a passivation film that covers a top surface of the functional region and a top surface of the insulating film, wherein the passivation film is cladded directly on the embedded layer.
12. The solid-state image pickup device according to claim 11 , wherein the embedded layer is configured of a metallic film or a silicon nitride film.
13. The solid-state image pickup device according to claim 12 , wherein the metallic film is configured of aluminum, tungsten, titanium, molybdenum, tantalum, copper, an alloy film of aluminum, tungsten, titanium, molybdenum, tantalum, copper, or a silicon- or oxygen-containing metallic film of aluminum, tungsten, titanium, molybdenum, tantalum, and copper.
14. A solid-state image pickup device, comprising:
a functional region provided with an organic film;
a guard ring surrounding the functional region;
an insulating film that is provided around the functional region; and
a passivation film that covers a top surface of the functional region and a top surface of the insulating film, wherein the guard ring is configured of the passivation film cladded at an inside of a groove that is provided on the insulating film.