Devices including memory arrays, row decoder circuitries and column decoder circuitries
Some embodiments include a device having an array of memory cells, a memory control unit at least partially under the array, row decoder circuitry in data communication with the memory control unit, and column decoder circuitry in data communication with the memory control unit. Some embodiments include a device having an array of memory cells, row decoder circuitry and column decoder circuitry. One of the row and column decoder circuitries is within a unit that extends at least partially under the array of memory cells and the other within a unit that is laterally outward of the array of memory cells.
1. A device, comprising:
an array of memory cells disposed within a first level above a base, the array of memory cells being divided into a first array unit and a second array unit;
row decoder circuitry disposed within a second level above the base, the second level being elevationally below the first level, the row decoder circuitry consisting of a single unit and being disposed partially under the first array unit and partially under the second array unit; and
column decoder circuitry disposed within the first level laterally outward of the array of memory cells.
2. The device of claim 1 wherein the first array unit and the second array unit are of equivalent size.
3. The device of claim 1 , further comprising peripheral circuitry disposed at the second level and comprising a memory control unit entirely under the array of memory cells.
4. The device of claim 3 wherein the peripheral circuitry comprises a first peripheral circuitry unit disposed entirely under the first array unit and a second peripheral circuitry unit disposed entirely under the second array unit.
5. The device of claim 4 wherein the first peripheral circuitry unit and the second peripheral circuitry unit are of equivalent size.
6. The device of claim 1 further comprising a bonding pad region disposed at the first level laterally outward of the array of memory cells.
7. The device of claim 1 wherein the bonding pad region is on an opposing side of the array of memory cells from the column decoder circuitry.
8. A device, comprising:
a semiconductor die having a first level and a second level elevationally above the first level, the die comprising:
an array of memory cells within the second level, the array being divided into a first array unit and a second array unit;
column decoder circuitry within the second level laterally outward of the array of memory cells;
peripheral circuitry divided into a first unit and a second unit, each of the first and second units being within the first level and being entirely under the array of memory cells;
row decoder circuitry disposed within the first level between the first and second units of peripheral circuitry, and being disposed at least partially under the array of memory cells; and
a bonding pad region laterally outward of the array of memory cells.
9. The device of claim 8 wherein the row decoder circuitry is partially under the first array unit and partially under the second array unit.
10. The device of claim 9 wherein the first array unit is spaced from the second array unit by a gap and wherein a central portion of the row decoder circuitry is disposed under the gap.
11. The device of claim 8 wherein the peripheral circuitry comprises a single memory control unit.
12. The device of claim 8 further comprising an interconnect region disposed laterally outward of the peripheral circuitry, the interconnect region providing connection between the first and second units of peripheral circuitry.
13. A device, comprising:
a semiconductor die having a first level and a second level elevationally above the first level;
an array of memory cells within the second level, the array of memory cells being divided into a first array unit and a second array unit, the first and second array units being separated by a gap;
decoder circuitry comprising row decoder circuitry consisting of a single unit entirely within the first level, and column decoder circuitry consisting of a single unit entirely disposed within the second level on a first side of the array of memory cells;
a bonding pad disposed along a second side of the array of memory cells, the second side opposing the first side; and
a memory control unit within the first level and disposed entirely under the first array unit.
14. The device of claim 13 wherein the row decoder unit is centrally disposed relative to the array of memory cells.
15. The device of claim 13 wherein the row decoder unit is disposed partially under the first array unit and partially under the second array unit.
16. The device of claim 13 further comprising a first bitline extending across the first array unit from the column decoder circuitry and a second bitline extending across the second array unit from the column decoder circuitry.
17. The device of claim 13 wherein the memory control unit is within a first unit of peripheral circuitry disposed under the first array unit.
18. The device of claim 17 further comprising a second unit of peripheral circuitry disposed under the second array unit.
19. The device of claim 18 wherein the first and second peripheral units are of equivalent size.
20. The device of claim 13 wherein the first array unit and the second array unit are of equivalent size.