Gate interface circuit

1. A circuit comprising:

a first feedforward path configured to determine a state of a first power switch using a first gate control voltage from a gate driver and a source voltage of the first power switch, and to apply a gate driving voltage to a gate of the first power switch based on the determined state of the first power switch; and

a first feedback path configured to provide a scaled value of a drain voltage of the first power switch and a scaled value of the source voltage of the first power switch to the gate driver,

wherein the first feedforward path and the first feedback path are configured to provide a bi-directional gate interface coupled between the gate driver and the first power switch.

2. The circuit of claim 1 , wherein the first feedforward path comprises a processing circuit, a driver circuit, and a level shifter coupled between the processing circuit and the driver circuit, wherein

the processing circuit is configured to determine the state of the first power switch using the first gate control voltage and the source voltage of the first power switch;

the level shifter is configured to shift a first output voltage of the processing circuit to a second output voltage; and

the driver circuit is configured to generate the gate driving voltage based on the second output voltage, and to apply the gate driving voltage to the gate of the first power switch.

3. The circuit of claim 2 , wherein the processing circuit is configured to measure a driving current from the gate driver, and wherein the level shifter is configured to amplify the measured driving current.

4. The circuit of claim 2 , further comprising a charge pump coupled to the processing circuit and the level shifter, the charge pump configured to provide a supply voltage to the processing circuit and the level shifter.

5. The circuit of claim 4 , further comprising an under-voltage detection block configured to:

compare the driving voltage provided by the charge pump with a pre-determined threshold, and

in response to detecting that the driving voltage provided by the charge pump is below the pre-determined threshold, generate a diagnostic signal at an output terminal.

6. The circuit of claim 4 , wherein the charge pump is reconfigurable, and an output voltage of the charge pump is configured in accordance with an operational voltage of the first power switch.

7. The circuit of claim 2 , wherein the first feedback path comprises:

a first voltage adaptation circuit coupled to a drain of the first power switch and configured to provide the scaled value of the drain voltage of the first power switch at a first output terminal; and

a second voltage adaptation circuit coupled to a source of the first power switch and configured to provide the scaled value of the source voltage of the first power switch at a second output terminal.

8. The circuit of claim 7 , wherein the processing circuit comprises:

a comparator having a first terminal configured to receive the first gate control voltage from the gate driver; and

a capacitor coupled between the first terminal of the comparator and an output of the second voltage adaptation circuit.

9. The circuit of claim 7 , wherein the processing circuit comprises:

a first amplifier having a first input terminal and a second input terminal, the first input terminal of the first amplifier being configured to accept as input the first gate control voltage from the gate driver;

a resistor coupled between the first input terminal of the first amplifier and the second input terminal of the first amplifier;

a second amplifier having a first input terminal and a second input terminal, the second input terminal of the second amplifier being configured to accept as input the scaled value of the source voltage of the first power switch, the second input terminal of the second amplifier being coupled to the second output terminal; and

a capacitor coupled between the first input terminal of the second amplifier and the second input terminal of the second amplifier, the capacitor connected to the resistor at a first node, the second input terminal of the first amplifier and the first input terminal of the second amplifier being connected to the first node.

10. The circuit of claim 9 , wherein the processing circuit is configured to transmit to the level shifter a transient behavior of the first gate control voltage and a transient behavior of a first gate control current corresponding to the first gate control voltage.

11. The circuit of claim 7 , wherein the first voltage adaptation circuit comprises a first voltage divider coupled between the drain of the first power switch and a reference voltage node, and the second voltage adaptation circuit comprises a second voltage divider coupled between the source of the first power switch and the reference voltage node, wherein each of the first voltage divider and the second voltage divider comprises:

a first resistor;

a second resistor coupled between the first resistor and the reference voltage node, wherein a node between the first resistor and the second resistor is coupled to the processing circuit; and

a voltage limiting device coupled in parallel with the second resistor.

12. The circuit of claim 11 , wherein the voltage limiting device is a Zener diode.

13. The circuit of claim 1 , further comprising:

the first power switch coupled to the first feedforward path and the first feedback path; and

the gate driver coupled to the first feedforward path and the first feedback path.

14. A power system comprising:

a gate driver integrated circuit (IC);

a plurality of power switches; and

a first gate interface between the gate driver IC and a first power switch of the plurality of power switches, wherein the first gate interface is configured to:

determine, using a first processing circuit, whether to turn the first power switch on or off by comparing a first gate control voltage provided at a first output pin of the gate driver IC and a first voltage at a first input pin of the gate driver IC that is proportional to a voltage at a source of the first power switch;

shift, using a first level shifter, an output voltage of the first processing circuit to an output voltage of the first level shifter different from the output voltage of the first processing circuit;

supply, using a first driver circuit, a driving voltage at a gate of the first power switch; and

send, using first voltage adaptation circuits, a value of a source voltage and a value of a drain voltage of the first power switch to the gate driver IC.

15. The power system of claim 14 , wherein the first processing circuit is configured to transmit a shape of the first gate control voltage to the first level shifter, wherein the shape of the first gate control voltage comprises a transient voltage when the first gate control voltage turns on or off the first power switch.

16. The power system of claim 14 , further comprising a second gate interface between the gate driver IC and a second power switch of the plurality of power switches, wherein the second gate interface is configured to:

determine, using a second processing circuit, whether to turn the second power switch on or off by comparing a second gate control voltage provided at a second output pin of the gate driver IC and a second voltage at a second input pin of the gate driver IC that is proportional to a voltage at a source of the second power switch;

shift, using a second level shifter, an output voltage of the second processing circuit to an output voltage of the second level shifter different from the output voltage of the second processing circuit;

supply, using a second driver circuit, a driving voltage at a gate of the second power switch; and

send, using second voltage adaptation circuits, a value of a source voltage and a value of a drain voltage of the second power switch to the gate driver IC.

17. The power system of claim 16 , wherein the first gate interface is implemented on a first monolithic semiconductor substrate, and the second gate interface is implemented on a second monolithic semiconductor substrate physically separated from the first monolithic semiconductor substrate.

18. The power system of claim 16 , wherein the first gate interface and the second gate interface are implemented on a same monolithic semiconductor substrate.

19. A method of operating a power system, the power system comprising a first gate interface configured to be coupled between a gate driver integrated circuit (IC) and a first power switch, the method comprising:

receiving, by the first gate interface, a first gate control voltage from the gate driver IC;

determining, by the first gate interface, whether to turn on or off the first power switch by comparing the first gate control voltage with a voltage proportional to a source voltage of the first power switch;

generating, by the first gate interface, a gate driving voltage at an output of the first gate interface based on the determination of whether to turn on or off the first power switch;

applying, by the first gate interface, the gate driving voltage to a gate of the first power switch;

scaling, by the first gate interface, a voltage at a source of the first power switch to generate a scaled source voltage; and

sending, by the first gate interface, a value of the scaled source voltage to the gate driver IC.

20. The method of claim 19 , further comprising:

sending, by the first gate interface, a value of a drain voltage of the first power switch to the gate driver IC.

21. The method of claim 19 , further comprising:

sending, by the first gate interface, a value of a voltage drop across a shunt resistor to the gate driver IC, wherein the shunt resistor is coupled between a drain of the first power switch and a power supply node coupled to the drain of the first power switch.