Methods of forming integrated structures

1. A method of forming an integrated structure, comprising:

forming a vertical stack of alternating first and second levels; the first levels comprising insulative first material, and the second levels comprising second material;

recessing the first levels relative to the second levels; the second levels having projecting terminal ends extending beyond the recessed first levels; the projecting terminal ends having exposed surfaces of the second material;

forming third material along the exposed surfaces of the second material and around the terminal ends of the second levels; the third material only partially overlapping the first level to leave regions of insulative first material of the first levels exposed;

forming fourth material along the exposed regions of the insulative first material; the third and fourth materials having outer surfaces that form a vertical edge;

forming charge-blocking material extending vertically along the vertical edge;

forming charge-storage material extending vertically along the charge-blocking material;

forming gate-dielectric material extending vertically along the charge-storage material;

forming channel material extending vertically along the gate-dielectric material;

removing the second and third materials to leave voids; and

forming conductive levels within the voids; the conductive levels having primary regions of a first vertical thickness, and having terminal projections of a second vertical thickness which is greater than the first vertical thickness.

2. The method of claim 1 wherein the first levels comprise a third vertical thickness, and wherein the third material is formed to a thickness of less than or equal to about one-third of the third vertical thickness.

3. The method of claim 1 wherein the second and third materials are a same composition as one another.

4. The method of claim 3 wherein the second and third materials comprise silicon nitride.

5. The method of claim 1 wherein the second and third materials are not a same composition as one another.

6. The method of claim 1 wherein the fourth material is electrically insulative.

7. The method of claim 1 wherein each conductive level comprises a conductive core surrounded by an outer conductive layer; with the conductive core comprising a different composition than the outer conductive layer.

8. The method of claim 7 wherein high-k insulative material is formed within the voids and becomes an insulative liner around the outer conductive layer.

9. The method of claim 8 wherein the conductive core is tungsten-containing core, the outer conductive layer comprises metal nitride, and the high-k insulative material comprises aluminum oxide.

10. The method of claim 1 wherein the charge-storage material comprises silicon nitride.