APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.
1 . An apparatus for processing a semiconductor substrate comprising:
a reaction chamber;
a susceptor configured to hold a substrate;
a first gas source for providing a first gas;
a second gas source for providing a second gas;
a first remote plasma unit configured to receive the first gas and produce a first radical gas;
a gas distribution device configured to flow the first radical gas and the second gas onto the substrate; and
a transport path connecting the remote plasma unit to the gas distribution device, wherein the first radical gas passes through the gas distribution device onto the substrate;
wherein the gas distribution device, the reaction chamber, the transport path, and the susceptor are coated with at least one of: anodized aluminum oxide (Al 2 O 3 ); atomic layer deposition (ALD)-formed aluminum oxide; plasma sprayed Al 2 O 3 ; bare aluminum parts with native aluminum oxide; yttrium oxide (Y 2 O 3 ); yttrium oxide stabilized zirconium oxide (YSZ); zirconium oxide (ZrO 2 ); lanthanum zirconium oxide (LZO); yttrium aluminum garnet (YAG); yttrium oxyfluoride (YOF); aluminum oxide (Al 2 O 3 ); zirconium oxide (ZrO 2 ); yttrium oxide (Y 2 O 3 ); or yttrium oxide stabilized zirconium oxide (YSZ).
2 . The apparatus of claim 1 , wherein the first gas comprises at least one of: NF 3 , CF 4 , C 2 F 6 , C 4 F 6 , C 4 F 8 , COF 2 , SF 6 , or WF 6 .
3 . The apparatus of claim 1 , wherein the second gas comprises at least one of: H 2 , NH 3 , H 2 O, O 2 , or O 3 .
4 . The apparatus of claim 1 , further comprising:
a third gas source for providing a third gas; and
a fourth gas source for providing a fourth gas.
5 . The apparatus of claim 4 , wherein the third gas comprises NH 3 .
6 . The apparatus of claim 4 , wherein the fourth gas comprises at least one of: argon, helium, nitrogen, or neon.
7 . The apparatus of claim 1 , wherein the first gas is used to remove an oxide from the substrate.
8 . The apparatus of claim 1 , wherein the second gas is used to remove carbon from the substrate.
9 . The apparatus of claim 1 , wherein the second gas passes through the first remote plasma unit and converts into a second radical gas.
10 . The apparatus of claim 1 , further comprising a second remote plasma unit configured to receive the second gas and produce a second radical gas.
11 . The apparatus of claim 1 , wherein the transport path comprises bulk quartz material.
12 . A method for processing a semiconductor substrate comprising:
providing a reaction chamber and a susceptor configured to hold a substrate;
performing an oxide conversion step on the substrate, the oxide conversion step comprising: (1) flowing a first gas into a first remote plasma unit to form a first radical gas; and (2) flowing the first radical gas onto the substrate;
performing an oxide sublimation step on the substrate, the oxide sublimation step comprising: (1) a first heating step; and (2) a second heating step; and
performing a carbon removal step on the substrate;
wherein the oxide conversion step, the oxide sublimation step, and the carbon removal step are each performed in the reaction chamber; and
wherein any of the oxide conversion step, the oxide sublimation step, and the carbon removal step are repeated as needed.
13 . The method of claim 12 , wherein the carbon removal step comprises:
flowing a second gas into the first remote plasma unit to form a second radical gas; and
flowing the second radical gas onto the substrate.
14 . The method of claim 12 , wherein the carbon removal step comprises:
flowing a second gas into a second remote plasma unit to form a second radical gas; and
flowing the second radical gas onto the substrate.
15 . The method of claim 12 , wherein the first gas comprises at least one of: NF 3 , CF 4 , C 2 F 6 , C 4 F 6 , C 4 F 8 , COF 2 , SF 6 , or WF 6 .
16 . The method of claim 13 , wherein the second gas comprises at least one of: H 2 , NH 3 , H 2 O, O 2 , or O 3 .
17 . A method for processing a semiconductor substrate comprising:
providing a reaction chamber and a susceptor configured to hold a substrate;
performing a carbon removal step on the substrate;
performing an oxide conversion step on the substrate, the oxide conversion step comprising: (1) flowing a first gas into a first remote plasma unit to form a first radical gas; and (2) flowing the first radical gas onto the substrate;
performing an oxide sublimation step on the substrate, the oxide sublimation step comprising: (1) a first heating step; and (2) a second heating step; and
wherein the carbon removal step, the oxide conversion step, and the oxide sublimation step are each performed in the reaction chamber; and
wherein any of the carbon removal step, the oxide conversion step, and the oxide sublimation step are repeated as needed.
18 . The method of claim 17 , wherein the carbon removal step comprises:
flowing a second gas into the first remote plasma unit to form a second radical gas; and
flowing the second radical gas onto the substrate.
19 . The method of claim 17 , wherein the carbon removal step comprises:
flowing a second gas into a second remote plasma unit to form a second radical gas; and
flowing the second radical gas onto the substrate.
20 . The method of claim 17 , wherein the first gas comprises at least one of: NF 3 , CF 4 , C 2 F 6 , C 4 F 6 , C 4 F 8 , COF 2 , SF 6 , or WF 6 .
21 . The method of claim 18 , wherein the second gas comprises at least one of: H 2 , NH 3 , H 2 O, O 2 , or O 3 .