Methods and apparatuses of driver circuits without voltage level shifters
Methods and apparatuses are provided for driver circuits without voltage level shifters. An example apparatus includes a semiconductor device including a row decoder circuit that includes a driver circuit and a switching circuit. The driver circuit is configured to receive an input signal having a first logical value, a first voltage signal, and a configurable power signal. The driver circuit is further configured to provide an output signal having the first logical value based on the first signal having the first logical value. A voltage level of the input signal is based on the first voltage signal and a voltage level the output signal is based on the configurable voltage signal. The switching circuit is configured to receive the first voltage signal and a second voltage signal and to provide the configurable voltage signal having a voltage level of one of the first voltage signal or the second voltage signal.
1. A voltage shift driver circuity of a semiconductor device comprising:
a plurality of driver circuits each configured to receive a respective input signal, a first voltage signal, and a configurable voltage signal, wherein, while the respective input signal have a first logical value, the plurality of driver circuits are configured to provide respective output signals having the first logical value and while the respective input signals has a second logical value, the plurality of driver circuits are configured to provide the respective output signals having the second logical value, wherein voltage levels of the respective input signals having the first logical value are based on the first voltage signal and voltage levels the respective output signals having the first logical value are based on the configurable voltage signal, and wherein the voltage levels of the respective input signals having the second logical value and the voltage levels of the respective output signals having the second logical value are each based on a reference voltage signal;
a switching circuit configured to receive the first voltage signal and a second voltage signal and to provide the configurable voltage signal having a voltage level of one of the first voltage signal or the second voltage signal.
2. The voltage shift driver circuity of the semiconductor device of claim 1 , wherein a driver circuit of the plurality of driver circuits comprises:
a first inverter configured to receive the respective input signal and to provide a respective inverted signal having a logically inverted value of the respective input signal, wherein the first inverter is coupled between a node receiving the first power signal and a node receiving the reference voltage signal; and
a second inverter coupled in series with the first inverter and configured to receive the respective inverted signal and to provide a respective output signal having a logically inverted value of the respective inverted signal, wherein the second inverter is coupled between a node receiving the configurable voltage signal and a node receiving the reference voltage signal.
3. The voltage shift driver circuity of the semiconductor chip of claim 2 , wherein the first inverter comprises a first transistor coupled in series with a second transistor between the node receiving the first voltage signal and the node receiving the second voltage signal.
4. The voltage shift driver circuity of the semiconductor chip of claim 2 , wherein the switching circuit comprises a voltage level shift circuit configured to provide a level shift signal based on a value of a control signal, wherein the value of the control signal is based on a value of the input signal.
5. The voltage shift driver circuity of the semiconductor chip of claim 2 , wherein the voltage level shift circuit comprises:
a first transistor coupled between a first node receiving the second voltage signal and a second node, wherein a gate of the first transistor is coupled to a third node;
a second transistor coupled between the second node and a fourth node receiving the reference voltage signal, wherein a gate of the second transistor is configured to receive the control signal;
a third transistor coupled between a fifth node receiving the second voltage signal and the third node, wherein a gate of the third transistor is coupled to the second node, wherein the level shift signal is provided from the third node; and
a fourth transistor coupled between the third node and the fourth node, wherein a gate of the second transistor is configured to receive an inverted control signal.
6. The voltage shift driver circuity of the semiconductor chip of claim 5 , wherein the voltage level shift circuit further comprises an inverter configured to receive the control signal and to provide the inverted control signal to the gate of the fourth transistor.
7. The voltage shift driver circuity of the semiconductor chip of claim 4 , wherein the switching circuit further comprises:
a first transistor configured to receive the level shift signal and to provide the first voltage signal as the configurable voltage signal responsive to the level shift signal having the second logical value; and
a second transistor configured to receive a logically inverted level shift signal and to provide the second voltage signal as the configurable voltage signal responsive to the level shift signal having the first logical value.
8. The voltage shift driver circuity of the semiconductor chip of claim 7 , wherein the first transistor and the second transistors are p-type transistors.