Semiconductor device assemblies with annular interposers
A semiconductor device package is provided. The package can include a stack of semiconductor dies over a substrate, the substrate including a plurality of electrical contacts, and an annular interposer disposed over the substrate and surrounding the stack of semiconductor dies. The annular interposer can include a plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts. The package can further include a lid disposed over the annular interposer and the stack of semiconductor dies.
1. A semiconductor device package, comprising:
a stack of semiconductor dies over a substrate;
the substrate including a plurality of electrical contacts;
an annular interposer disposed over the substrate and surrounding the stack of semiconductor dies, the annular interposer including a plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts; and
a lid disposed over the annular interposer and the stack of semiconductor dies.
2. The semiconductor device package of claim 1 , wherein the plurality of circuit elements extend upwardly from an upper surface of the annular interposer.
3. The semiconductor device package of claim 1 , wherein the plurality of circuit elements are located within a substrate of the annular interposer.
4. The semiconductor device package of claim 1 , wherein the lid has a substantially planar lower surface free of recesses.
5. The semiconductor device package of claim 1 , wherein the plurality of circuit elements are each electrically coupled to at least the corresponding one of the plurality of electrical contacts via one or more solder connections on a lower surface of the annular interposer.
6. The semiconductor device package of claim 1 , wherein the plurality of circuit elements is a first plurality of circuit elements, and wherein the substrate further includes a second plurality of circuit elements.
7. The semiconductor device package of claim 6 , wherein the second plurality of circuit elements extend upwardly from an upper surface of the substrate.
8. The semiconductor device package of claim 7 , wherein a lower surface of the annular interposer is in contact with at least one of the second plurality of circuit elements.
9. The semiconductor device package of claim 6 , wherein the second plurality of circuit elements are disposed peripherally around the stack of semiconductor dies.
10. The semiconductor device package of claim 1 , wherein the annular interposer is a first annular interposer, and further comprising a second annular interposer disposed over the first annular interposer and surrounding the stack of semiconductor dies, the second annular interposer including a second plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts.
11. The semiconductor device package of claim 1 , further comprising a fill material between the annular interposer and at least one of the substrate and the lid.
12. A semiconductor device assembly, comprising:
a substrate having an upper surface with a plurality of electrical contacts thereon;
a stack of semiconductor dies disposed over the upper surface of the substrate, the stack of semiconductor dies extending above the upper surface of the substrate by a first height;
a first plurality of circuit elements disposed over the upper surface of the substrate peripherally to the stack of semiconductor dies, the plurality of circuit elements extending above the upper surface of the substrate by a second height less than the first height;
an annular interposer disposed over the plurality of circuit elements, the annular interposer including an opening through which the stack of semiconductor dies extends, the annular interposer further including a second plurality of circuit elements, each of the second plurality of circuit elements being electrically coupled to at least one of the plurality of electrical contacts; and
a lid disposed over both the stack of semiconductor dies and the annular interposer.
13. The semiconductor device assembly of claim 12 , wherein the second plurality of circuit elements extend upwardly from an upper surface of the annular interposer.
14. The semiconductor device assembly of claim 12 , wherein the second plurality of circuit elements are located within a substrate of the annular interposer.
15. The semiconductor device assembly of claim 12 , wherein the lid has a substantially planar lower surface free of recesses.
16. The semiconductor device assembly of claim 12 , wherein the second plurality of circuit elements are each electrically coupled to at least the corresponding one of the plurality of electrical contacts via one or more solder connections on a lower surface of the annular interposer.
17. The semiconductor device assembly of claim 12 , wherein the first and second plurality of circuit elements are disposed peripherally around the stack of semiconductor dies.
18. The semiconductor device assembly of claim 12 , wherein the annular interposer is a first annular interposer, and further comprising a second annular interposer disposed over the first annular interposer and surrounding the stack of semiconductor dies, the second annular interposer including a third plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts.
19. The semiconductor device assembly of claim 14 , further comprising a fill material between the annular interposer and at least one of the substrate and the lid.