Metal interconnect structure and method for fabricating the same
A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
1. A semiconductor device, comprising:
a metal interconnection in a dielectric layer, wherein the metal interconnection comprises:
a first liner is made of Co—Ru alloy;
a barrier layer between the dielectric layer and the first liner;
a second liner between the barrier layer and the first liner, wherein the second liner directly contacts the first liner and the barrier layer entirely, each of the first liner, the barrier layer, and the second liner comprises a U-shape and the second liner is made of cobalt (Co); and
a metal layer on the first liner.
2. The semiconductor device of claim 1 , wherein the barrier layer comprises titanium nitride (TiN).
3. The semiconductor device of claim 1 , further comprising a third liner between the first liner and the metal layer.
4. The semiconductor device of claim 3 , wherein the second liner and the third liner comprise different thicknesses.
5. The semiconductor device of claim 3 , wherein the second liner and the third liner comprise same thickness.
6. The semiconductor device of claim 3 , wherein the third liner is made of ruthenium (Ru).
7. The semiconductor device of claim 1 , wherein the metal layer comprises copper (Cu).
8. The semiconductor device of claim 1 , wherein an entire bottom surface of the second liner directly contacts an entire top surface of the barrier layer and an entire top surface of the second liner directly contacts an entire bottom surface of the first liner.
9. A semiconductor device, comprising: a metal interconnection in a dielectric layer, wherein the metal interconnection comprises:
a first liner is made of Co—Ru alloy;
a barrier layer between the dielectric layer and the first liner;
a second liner between the barrier layer and the first liner, wherein the second liner directly contacts the first liner and the barrier layer entirely and the second liner is made of cobalt (Co);
a metal layer on the first liner; and
a third liner between the first liner and the metal layer, wherein the third liner directly contacts the first liner and the metal layer entirely and the third liner is made of ruthenium (Ru).
10. The semiconductor device of claim 9 , wherein an entire bottom surface of the second liner directly contacts an entire top surface of the barrier layer and an entire top surface of the second liner directly contacts an entire bottom surface of the first liner.
11. The semiconductor device of claim 9 , wherein an entire bottom surface of the third liner directly contacts an entire top surface of the first liner and an entire top surface of the third liner directly contacts an entire bottom surface of the metal layer.