IP Library Granted Patent US 10,868,899
Granted Patent B2
US 10,868,899 · App. 16/015,428 · Granted Dec 15, 2020

Film for applying compressive stress to ceramic materials

Inventors: Rajiv K. Singh (Newberry, FL); Deepika Singh (Newberry, FL)
Assignees: ENTEGRIS, INC.; UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
H04M1/0266B32B7/02C03C17/22C03C17/225C23C14/0676C23C16/308C30B29/20C30B33/00C03C2217/28C03C2217/281C03C2218/322C04B2111/805G06F1/1637
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Quick Facts
Patent No.
US 10,868,899
App. No.
16/015,428
Granted
Dec 15, 2020
Kind
B2
Abstract

A method to provide compressive stress to substrates includes depositing a film on a ceramic substrate at a deposition temperature (Td) to form an article, the film having a difference relative to the ceramic substrate at Td in a coefficient thermal expansion (CTE) of at least 1.0×10 −6 /K and a difference in a refractive index >0.10. At least a portion of the thickness the film is converted in at least one of composition, phase and microstructure by lowering or raising the temperature from Td to reach a changed temperature (Tc) that is at least 100° C. different from Td. The film converting conditions result in the converted film portion providing a difference in refractive index at the Tc between the converted film and the ceramic substrate of ≤|0.10|. The temperature of the article is then lowered to room temperature.

Claims (19)

1. A method to provide compressive stress to substrates, comprising:

depositing a nitride film on a ceramic substrate at a deposition temperature (Td) to form an article, said nitride film having a difference in a coefficient thermal expansion (CTE) relative to said ceramic substrate at said Td of at least 1.0×10−6/K and a difference in a refractive index of greater than (>) 0.10;

converting said nitride film comprising lowering or raising a temperature from said Td to reach a changed temperature (Tc) that is at least 100° C. different from said Td, wherein conditions for said converting result in said nitride film becoming in at least a portion of its thickness a converted film through a composition change such that there is an increase in oxygen content by at least (≥) 10 mole percent, a decrease in nitrogen content by at least (≥) 10 mole percent, or a decrease in carbon content by at least (≥) 10 mole percent, so that a difference in said refractive index at said Tc of said converted film and said ceramic substrate is ≤|0.10|, and

lowering a temperature of said article from said Tc to room temperature, wherein said nitride film is an AlO a N b film, wherein a+b<1.5, a SiCON film, or a SiAlCON film.

2. The method of claim 1 , wherein said substrate comprises sapphire.

3. The method of claim 1 , wherein said converting comprises flowing one or more of carbon, oxygen or nitrogen containing gases.

4. The method of claim 1 , wherein said article is optically transparent.

5. The method of claim 1 , wherein said substrate comprises a silica-based glass, sapphire, alumina, or a spinel.

6. The method of claim 1 , wherein said portion of said converted film is under a compressive stress, and wherein said substrate is under a tensile stress.

7. The method of claim 1 , wherein said article comprises a display screen of a cellular phone.

8. The method of claim 1 , wherein said portion of said converted film is from 10% to 80%.

9. The method of claim 1 , wherein after said converting said difference in said refractive index of said nitride film and said ceramic substrate is <10.051.

10. The method of claim 1 , wherein, after said converting of said nitride film, a compressive stress in said film is 1 MPa to 10 GPa.

11. The method of claim 1 , wherein said nitride film is an AlO a N b film, wherein a+b<1.5 and wherein said converted film is an AlO x N y film wherein x+y<1.5 and wherein x>a and y<b.

12. The method of claim 11 , wherein a is from 0 to 0.5.

13. The method of claim 11 , wherein a=0.

14. The method of claim 11 , wherein x is from 0.5 to 1.5.

15. The method of claim 11 , wherein x=1.5 and y=0.

16. The method of claim 1 , wherein said nitride film is a SiCON film and wherein said converted film is SiO x N y film, wherein x+y<2.

Assignments (5)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060614/0980 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 14, 2020
From: SINMAT, INC.
To: ENTEGRIS, INC.
Reel/Frame 052388/0520 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2018
From: SINGH, DEEPIKA
To: SINMAT, INC.
Reel/Frame 046176/0473 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2018
From: SINGH, RAJIV K.
To: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
Reel/Frame 046176/0734 →
Continuity (2)
Provisional Application 62524105 · Jun 23, 2017
Related Publication 20180375978A1 · Dec 27, 2018