System and method of forming a porous low-K structure
The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.
1. A method of fabricating a semiconductor device, comprising:
forming an opening in a conductive layer;
forming a barrier layer partially in the opening;
treating the barrier layer, wherein the barrier layer is more hydrophilic after being treated; and
filling the opening with a dielectric material, wherein the dielectric material is formed over the treated barrier layer.
2. The method of claim 1 , further comprising: forming a conductive via in a portion of the dielectric material, wherein the conductive via is formed over a portion of the conductive layer.
3. The method of claim 1 , wherein the treating comprises a plasma treatment process.
4. The method of claim 3 , wherein the plasma treatment process uses NH3, O2, He, Ar, N2O, or CO2.
5. The method of claim 1 , wherein the filling comprises filling the opening with a dielectric material that contains porogens.
6. The method of claim 5 , further comprising, before the filling: configuring a mixing ratio of a methyl-containing precursor component to a methyl-free precursor component for the dielectric material.
7. The method of claim 5 , wherein the porogens have hydrophilic outer surfaces.
8. The method of claim 5 , further comprising: transforming the porogens into porous elements in the dielectric material.
9. The method of claim 8 , wherein the porogens contain micelles, and wherein the transforming causes the micelles to leave the porogens.
10. The method of claim 8 , wherein the transforming comprises an ultraviolet curing process.
11. A method of fabricating a semiconductor device, comprising:
forming an opening in a metal layer;
forming a barrier layer partially in the opening;
increasing a hydrophilicity of the barrier layer by applying a plasma treatment process to the barrier layer; and
filling the opening with a dielectric material that contains porogens having hydrophilic outer surfaces, wherein the dielectric material is formed over the barrier layer; and
turning the porogens into porous structures by applying an ultraviolet curing process or by applying a thermal process.
12. The method of claim 11 , wherein the porogens contain micelles, and wherein the ultraviolet curing process or the thermal process causes micelles to evaporate out of the porogens.
13. A method of fabricating a semiconductor device, comprising:
forming a plurality of conductive elements over a substrate, wherein the conductive elements are separated from one another by a plurality of openings;
forming a barrier layer over the conductive elements, wherein the barrier layer is formed to cover sidewalls of the openings;
performing a treatment process to the barrier layer, wherein the barrier layer becomes hydrophilic after the treatment process is performed; and
forming a dielectric material over the barrier layer after the treatment process has been performed, wherein the dielectric material fills the openings and contains a plurality of porogens.
14. The method of claim 13 , further comprising: curing the dielectric material, wherein the porogens become porous after the curing.
15. The method of claim 13 , further comprising:
forming a via opening over at least one of the conductive elements; and
forming a conductive via in the via opening.
16. The method of claim 13 , wherein the forming of the dielectric material comprises configuring a mixing ratio of a methyl-containing precursor component to a methyl-free precursor component.
17. The method of claim 13 , wherein the treatment process comprises a plasma process using NH 3 , O 2 , He, Ar, N 2 O, or CO 2 .
18. The method of claim 13 , wherein the treatment process is performed under the following process conditions:
a flow rate in a range from about 500 standard cubic centimeters per minute (sccm) to about 2000 sccm;
a process temperature in a range from about 100 degrees Celsius to about 400 degrees Celsius;
a process pressure in a range from about 0.1 Torr to about 10 Torrs;
a process power in a range from about 50 Watts to about 1500 Watts; and
a process duration in a range from about 2 seconds to about 120 seconds.
19. The method of claim 13 , wherein the forming the dielectric material is performed such that the porogens congregated inside the openings.
20. The method of claim 13 , wherein the forming the dielectric material comprises forming the dielectric material having a dielectric constant lower than a dielectric constant of silicon dioxide.