IP Library Granted Patent US 10,593,618
Granted Patent B2
US 10,593,618 · App. 16/017,652 · Granted Mar 17, 2020

Packaged die stacks with stacked capacitors and methods of assembling same

Inventors: Bok Eng Cheah (Bukit Gambir, MY); Mooi Ling Chang (Bayan Baru, MY); Ping Ping Ooi (Butterworth, MY); Jackson Chung Peng Kong (Tanjung Tokong, MY); Wen Wei Lum (Sungai Petani, MY)
Assignee: Intel Corporation
H01L23/5223H01G4/30H01G4/38H01G4/40H01L24/17H01L25/0657H01L25/16H01L28/60H01L23/50H01L23/5389H01L24/16H01L2224/16145H01L2224/16146H01L2224/16225H01L2224/16265H01L2224/171H01L2224/17181H01L2224/18H01L2224/32265H01L2224/73203H01L2224/73259H01L2924/15311H01L2924/19105
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Quick Facts
Patent No.
US 10,593,618
App. No.
16/017,652
Granted
Mar 17, 2020
Kind
B2
Abstract

A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Claims (43)

1. A semiconductive apparatus, comprising:

a primary die disposed on a package substrate at a primary package level;

a subsequent die stacked above the primary die at a subsequent package level;

a first subsequent-level capacitor located at the subsequent package level, wherein the first subsequent-level capacitor is electrically coupled to the subsequent die;

a first primary-level capacitor disposed on the package substrate at the primary package level, wherein the first primary-level capacitor is electrically coupled to the primary die;

a secondary die located at a secondary package level that is stacked above and on the primary package level, and that is located below the subsequent package level;

a first secondary-level capacitor located at the secondary package level, wherein the first secondary-level capacitor is electrically coupled to the secondary die;

a subsequent primary-level capacitor disposed on the package substrate at the primary package level, wherein the subsequent primary-level capacitor is electrically coupled to the primary die; and

a subsequent secondary-level capacitor located at the secondary package level, wherein the subsequent secondary-level capacitor is electrically coupled to the secondary die;

wherein the first primary-level capacitor, and the first subsequent-level capacitor share a merged power rail, wherein the subsequent primary-level capacitor is electrically coupled to the primary die by a dedicated power rail, and wherein the subsequent secondary-level capacitor is electrically coupled to the secondary die by a dedicated power rail.

2. A semiconductive apparatus, comprising:

a primary die disposed on a package substrate at a primary package level;

a subsequent die stacked above the primary die at a subsequent package level;

a first subsequent-level capacitor located at the subsequent package level, wherein the first subsequent-level capacitor is electrically coupled to the subsequent die; and

a first primary-level capacitor disposed on the package substrate at the primary package level, wherein the first primary-level capacitor is electrically coupled to the primary die;

wherein the first primary-level capacitor and the first subsequent-level capacitor share a merged power rail.

3. An assembly process comprising:

seating a capacitor at a subsequent level of a stacked-die package, wherein a primary die is located at a primary package level that is disposed on a package substrate, and wherein the subsequent level is above the primary package level;

connecting the capacitor to at least one of the primary die and a subsequent die; and

forming a molding layer that at least partially encapsulates the capacitor and the subsequent die wherein the capacitor is a first tertiary-level capacitor, and wherein the subsequent die is a tertiary die located above and on a secondary package level, further including:

seating a secondary die above and on the primary die at the secondary package level;

seating a first secondary-level capacitor above and on the primary package level, and coupling the first secondary-level capacitor to the secondary die by a merged power rail;

seating a subsequent secondary-level capacitor above an on the primary package level, and coupling the subsequent secondary-level capacitor to the secondary die by a dedicated power rail.

4. An assembly process comprising:

seating a capacitor at a subsequent level of a stacked-die package, wherein a primary die is located at a primary package level that is disposed on a package substrate, and wherein the subsequent level is above the primary package level;

connecting the capacitor to at least one of the primary die and a subsequent die; and

forming a molding layer that at least partially encapsulates the capacitor and the subsequent die, wherein the capacitor is a first quaternary-level capacitor, and wherein the subsequent die is a quaternary die located above and on a tertiary package level, further including:

seating a secondary die above and on the primary die at a secondary package level;

seating a first secondary-level capacitor above and on the primary package level, and coupling the first secondary-level capacitor to the secondary die by a merged power rail;

seating a tertiary die above and on the secondary package level;

seating a first tertiary-level capacitor above and on the secondary package level, and coupling the first tertiary-level capacitor to the tertiary die by a merged power rail;

seating a subsequent tertiary-level capacitor above and on the secondary package level, and coupling the subsequent tertiary-level capacitor to the tertiary die by a dedicated power rail.

5. A computing system, comprising:

a primary die disposed on a package substrate at a primary package level;

a subsequent die stacked above the primary die at a subsequent package level;

a first subsequent-level capacitor located at the subsequent package level, wherein the first subsequent-level capacitor is electrically coupled to the subsequent die; and

a board bonded to the package substrate at an electrical bump array; and

a shell portion of the board, wherein the shell portion electrically insulates the primary die and the board.

6. The computing system of claim 5 , further including:

a first primary-level capacitor disposed on the package substrate at the primary package level, wherein the first primary-level capacitor is electrically coupled to the primary die;

a subsequent primary-level capacitor disposed on the package substrate at the primary package level, wherein the subsequent primary-level capacitor is electrically coupled to the primary die.

7. The computing system of claim 6 , further including:

a subsequent subsequent-level capacitor located at the subsequent package level, wherein the subsequent subsequent-level capacitor is electrically coupled to the subsequent die.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2025
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)
Reel/Frame 072792/0414 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 1, 2019
From: CHEAH, BOK ENG; CHANG, MOOI LING; OOI, PING PING; KONG, JACKSON CHUNG PENG; LUM, WEN WEI
To: INTEL CORPORATION
Reel/Frame 049049/0576 →
Priority Claims (1)
MY PI 2017702405 · Jun 29, 2017 · national
Continuity (1)
Related Publication 20190006277A1 · Jan 3, 2019
Cited By (3)
US 12,500,214 US 12,580,126 US 12,614,677