Method of maintaining the state of semiconductor memory having electrically floating body transistor
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
1. An integrated circuit comprising:
an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
a transistor comprising a source region, a floating body region, a drain region, and a gate;
a first bipolar device having a first floating base region, a first emitter, and a first collector; and
a second bipolar device having a second floating base region, a second emitter, and a second collector,
wherein said first floating base region and said second floating base region are common to said floating body region;
wherein said first collector is common to said second collector;
wherein at least one of said first bipolar device or second bipolar device maintains a state of said memory cell;
wherein said transistor is usable to access said memory cell;
a first control circuit configured to perform a holding operation on said array; and
a second control circuit configured to access a selected memory cell and perform a read or write operation on said selected memory cell.
2. The integrated circuit of claim 1 , wherein said first control circuit is configured to provide electrical signals to at least two of said memory cells to maintain the states of said at least two memory cells.
3. The integrated circuit of claim 2 , wherein said electrical signals are constant voltage biases.
4. The integrated circuit of claim 2 , wherein said electrical signals are periodic pulses of voltage.
5. The integrated circuit of claim 2 , wherein said electrical signals result in at least two stable states.
6. The integrated circuit of claim 1 , wherein said integrated circuit comprises a fin structure extending from said substrate.
7. The integrated circuit of claim 1 , wherein said first control circuit comprises a voltage generator circuit.
8. The integrated circuit of claim 1 , further comprising a multiplexer electrically connected between said voltage generator circuit and said collectors.
9. The integrated circuit of claim 1 , wherein said second control circuit comprises a reference generator circuit configured to sense potential of said floating body region.
10. The integrated circuit of claim 1 , wherein said second control circuit comprises a read circuit connected to one of said source or drain region.
11. The integrated circuit of claim 10 , further comprising a reference generator circuit connected to said read circuit.
12. An integrated circuit comprising:
an array of semiconductor memory cells formed in a semiconductor substrate having at least one surface, the array comprising:
said semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell includes:
a transistor comprising a source region, a floating body region, a drain region, and a gate;
a first bipolar device having a first floating base region, a first emitter, and a first collector; and
a second bipolar device having a second floating base region, a second emitter, and a second collector,
wherein said first floating base region and said second floating base region are common to said floating body region;
wherein said first collector is common to said second collector;
wherein at least one of said first bipolar device or second bipolar device maintains a state of said memory cell;
wherein said transistor is usable to access said memory cell;
a first control circuit configured to access a selected memory cell and perform a read or write operation on said selected memory cell; and
a second control circuit configured to provide electrical signals to perform a holding operation on said array, wherein said electrical signals are applied to a terminal not used for memory address selection.
13. The integrated circuit of claim 12 , wherein said electrical signals to perform a holding operation are applied to a terminal connected to said first and second collectors.
14. The integrated circuit of claim 12 , wherein said electrical signals to perform a holding operation are constant voltage biases.
15. The integrated circuit of claim 12 , wherein said electrical signals to perform a holding operation are periodic pulses of voltage.
16. The integrated circuit of claim 12 , wherein said electrical signals to perform a holding operation result in at least two stable states.
17. The integrated circuit of claim 12 , wherein said integrated circuit comprises a fin structure extending from said substrate.
18. The integrated circuit of claim 12 , wherein said first control circuit comprises a voltage generator circuit.
19. The integrated circuit of claim 18 , further comprising a multiplexer electrically connected between said voltage generator circuit and said collectors.
20. The integrated circuit of claim 12 , wherein said second control circuit comprises a reference generator circuit configured to sense potential of said floating body region.
21. The integrated circuit of claim 12 , wherein said second control circuit comprises a read circuit connected to one of said source or drain region.
22. The integrated circuit of claim 21 , further comprising a reference generator circuit connected to said read circuit.