IP Library › Granted Patent US 10,586,597
Granted Patent B2
US 10,586,597 · App. 16/019,631 · Granted Mar 10, 2020

Programming of memory devices responsive to a stored representation of a programming voltage indicative of a programming efficiency

Inventors: Silvia Beltrami (Almenno San Bartolomeo, IT); Angelo Visconti (Appiano Gentile, IT)
Assignee: Micron Technology, Inc.
G11C16/10G11C16/12G11C16/3459G11C16/3463G11C16/3468G11C16/3486G11C16/3495
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Quick Facts
Patent No.
US 10,586,597
App. No.
16/019,631
Granted
Mar 10, 2020
Kind
B2
Abstract

Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage.

Claims (7)

1. A method of operating a memory device, comprising:

programming a page of a memory block of the memory device using a particular starting programming voltage;

determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block;

storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block;

setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block; and

programming the different page of the memory block using its starting programming voltage;

wherein programming the different page of the memory block using its starting programming voltage comprises programming the different page of the memory block using a starting programming voltage equal to the programming voltage indicative of the programming efficiency of the page of the memory block.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Oct 11, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050713/0001 →
SUPPLEMENT NO. 9 TO PATENT SECURITY AGREEMENT Recorded Aug 9, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 047282/0463 →
Continuity (4)
Continuation 14856105 · Sep 16, 2015
Continuation 14301798 · Jun 11, 2014
Continuation 12490002 · Jun 23, 2009
Related Publication 20180308552A1 · Oct 25, 2018