IP Library Granted Patent US 10,409,164
Granted Patent B2
US 10,409,164 · App. 16/027,034 · Granted Sep 10, 2019

Heat-reactive resist material, mold manufacturing method, mold, development method and pattern formation material

Inventors: Yoshimichi Mitamura (Tokyo, JP); Takuto Nakata (Tokyo, JP)
Assignee: ASAHI KASEI KABUSHIKI KAISHA
G03F7/38B29C33/3857B29C59/022B82Y10/00B82Y40/00C04B35/45G03F7/0002G03F7/0043G03F7/32G03F7/322G11B7/261B29C33/424B29C2059/023G03F7/0017G11B7/14
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Quick Facts
Patent No.
US 10,409,164
App. No.
16/027,034
Granted
Sep 10, 2019
Kind
B2
Abstract

A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.

Claims (8)

1. A pattern formation material comprising a combination of a heat-reactive resist material and a developing solution, wherein

the heat-reactive resist material contains copper oxide, and silicon or silicon oxide,

the developing solution comprises glycine solution or a mixed solution of glycine and ammonium oxalate, the glycine solution and the glycine being an amino acid solution and an amino acid, respectively, and

a Si additive amount of the silicon or the silicon oxide in the heat-reactive resist material ranges from 4.5 mol % to 9.5 mol % in the total moles of copper (Cu) and silicon (Si).

2. The pattern formation material according to claim 1 , wherein

the content of the silicon or the silicon oxide in the heat-reactive resist material ranges from 5.5 mol % to 8.5 mol % in the total number of moles of copper (Cu) and silicon (Si).

3. The pattern formation material according to claim 1 , wherein

the content of the silicon or the silicon oxide in the heat-reactive resist material ranges from 6.5 mol % to 8.5 mol % in the total number of moles of copper (Cu) and silicon (Si).

Assignments (1)
MERGER AND CHANGE OF NAME Recorded Jul 19, 2019
From: ASAHI KASEI E-MATERIALS CORPORATION; ASAHI KASEI KABUSHIKI KAISHA
To: ASAHI KASEI KABUSHIKI KAISHA
Reel/Frame 049804/0391 →
Priority Claims (2)
JP 2011-254839 · Nov 22, 2011 · national
JP 2012-149834 · Jul 3, 2012 · national
Continuity (2)
Division 14359869
Related Publication 20180314159A1 · Nov 1, 2018