Semiconductor device and method of forming protrusion E-bar for 3D SIP
A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.
1. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a semiconductor die over the first substrate;
providing a second substrate including a conductive post protruding from the second substrate;
disposing the second substrate over the first substrate;
forming an opening in the second substrate aligned with the conductive post; and
forming an interconnect structure in the opening to contact the conductive post.
2. The method of claim 1 , further including depositing an encapsulant around the second substrate and semiconductor die.
3. The method of claim 1 , wherein a portion of the conductive post is embedded within the second substrate.
4. The method of claim 1 , wherein the conductive post includes:
forming a first conductive layer; and
forming a second conductive layer over the first conductive layer, wherein the first conductive layer is wider than the second conductive layer.
5. The method of claim 1 , further including disposing a discrete electrical component over a surface of the first substrate opposite the semiconductor die.
6. The method of claim 5 , further including forming a shielding layer over the discrete electrical component.
7. A method of making a semiconductor device, comprising:
providing a substrate including a conductive post extending from the substrate;
disposing a semiconductor die adjacent to the substrate;
forming an opening extending completely through the substrate to the conductive post; and
forming an interconnect structure in the opening to contact the conductive post.
8. The method of claim 7 , further including depositing an encapsulant around the substrate and semiconductor die.
9. The method of claim 7 , wherein a portion of the conductive post is embedded within the substrate.
10. The method of claim 7 , further including disposing a semiconductor package over the semiconductor device.
11. The method of claim 7 , further including disposing a discrete electrical component over a surface of the substrate opposite the semiconductor die.
12. The method of claim 11 , further including forming a shielding layer over the discrete electrical component.
13. The method of claim 7 , wherein the conductive post includes:
forming a first conductive layer; and
forming a second conductive layer over the first conductive layer.
14. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a semiconductor die over the first substrate;
disposing a second substrate including a conductive post protruding from the second substrate over the first substrate; and
forming an interconnect structure in an opening in the second substrate and aligned with the conductive post to contact the conductive post.
15. The method of claim 14 , further including depositing an encapsulant around the second substrate and semiconductor die.
16. The method of claim 14 , wherein a portion of the conductive post is embedded within the second substrate.
17. The method of claim 14 , wherein the conductive post includes:
a first conductive layer; and
a second conductive layer formed over the first conductive layer.
18. The method of claim 14 , further including disposing a discrete electrical component over a surface of the first substrate opposite the semiconductor die.
19. The method of claim 18 , further including forming a shielding layer over the discrete electrical component.
20. A method of making a semiconductor device, comprising:
providing a substrate including a conductive post extending from the substrate;
disposing a semiconductor die adjacent to the substrate; and
forming an interconnect structure in an opening which extends substantially through the substrate to contact the conductive post.
21. The method of claim 20 , further including depositing an encapsulant around the substrate and semiconductor die.
22. The semiconductor device of claim 20 , wherein a portion of the conductive post is embedded within the substrate.
23. The semiconductor device of claim 20 , further including disposing a discrete electrical component over a surface of the substrate opposite the semiconductor die.
24. The semiconductor device of claim 23 , further including forming a shielding layer over the discrete electrical component.
25. The semiconductor device of claim 20 , wherein the conductive post includes:
a first conductive layer; and
a second conductive layer formed over the first conductive layer.