Magnetoresistive random access memory
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.
1. A semiconductor device, comprising:
a substrate having an array region defined thereon;
a ring of magnetic tunneling junction (MTJ) region surrounding the array region; and
metal interconnect patterns overlapping part of the ring of MTJ region.
2. The semiconductor device of claim 1 , further comprising a gap between the array region and the ring of MTJ region.
3. The semiconductor device of claim 2 , wherein the ring of MTJ region comprises:
a first MTJ region and a second MTJ region extending along a first direction; and
a third MTJ region and a fourth MTJ region extending along a second direction.
4. The semiconductor device of claim 3 , wherein the first MTJ region overlaps the third MTJ region at a first corner, the first MTJ region overlaps the fourth MTJ region at a second corner, the second MTJ region overlaps the third MTJ region at a third corner, and the second MTJ region overlaps the fourth MTJ region at a fourth corner.
5. The semiconductor device of claim 4 , wherein each of the metal interconnect patterns comprises a square or rectangle.
6. The semiconductor device of claim 5 , wherein one of the metal interconnect patterns overlap the first corner.
7. The semiconductor device of claim 6 , wherein one of the metal interconnect patterns overlap the second corner.
8. The semiconductor device of claim 7 , wherein one of the metal interconnect patterns overlap the third corner.
9. The semiconductor device of claim 8 , wherein one of the metal interconnect patterns overlap the fourth corner.
10. A semiconductor device, comprising:
a substrate having an array region defined thereon;
a first ring of magnetic tunneling junction (MTJ) region surrounding the array region;
a second ring of MTJ region surrounding the first ring of MTJ region; and
a third ring of MTJ region surrounding the second ring of MTJ region.
11. The semiconductor device of claim 10 , further comprising a first gap between the array region and the first ring of MTJ region.
12. The semiconductor device of claim 11 , further comprising a second gap between the first ring of MTJ region and the second ring of MTJ region.
13. The semiconductor device of claim 12 , wherein the first gap and the second gap comprise different widths.
14. The semiconductor device of claim 12 , further comprising a third gap between the second ring of MTJ region and the third ring of MTJ region.
15. The semiconductor device of claim 14 , wherein the second gap and the third gap comprise different widths.
16. The semiconductor device of claim 10 , further comprising metal interconnect patterns overlapping part of the first ring of MTJ region, part of the second ring of MTJ region, and part of the third ring of MTJ region.
17. The semiconductor device of claim 16 , wherein each of the metal interconnect patterns comprises a square or rectangle.