Interconnection for memory electrodes
Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
1. An apparatus, comprising:
a first electrode line and a second electrode line extending in a same direction, wherein at least a portion of the first electrode line extends beyond a portion of the second electrode line, and wherein the first electrode line comprises a first jog segment and the second electrode line comprises a second jog segment; and
a connector coupled with the first jog segment, or the second jog segment, or both.
2. The apparatus of claim 1 , further comprising:
a socket region comprising a first socket coupled with the first electrode line and a second socket coupled with the second electrode line, wherein the first electrode line extends beyond a boundary of the socket region, and wherein the second electrode line is located entirely within the boundary of the socket region.
3. The apparatus of claim 1 , wherein a distance between the first jog segment and the second jog segment is greater than a distance between another portion of the first electrode line and another portion of the second electrode line.
4. The apparatus of claim 1 , further comprising:
a third electrode line extending in a different direction than the first electrode line and the second electrode line, wherein at least a portion of the third electrode line intersects at least a portion of the first electrode line, at least a portion of the second electrode line, or both.
5. The apparatus of claim 1 , wherein the first electrode line and the second electrode line are formed at a first vertical level of a stack.
6. The apparatus of claim 5 , further comprising:
a second vertical level of the stack comprising a fourth electrode line and a fifth electrode line extending in a second direction.
7. The apparatus of claim 6 , wherein a connector at the first vertical level of the stack and a connector at the second vertical level of the stack are each coupled with an interconnect that provide a path for an electrical signal to pass from the first vertical level the second vertical level.
8. An apparatus, comprising:
a plurality of memory tiles;
a plurality of socket regions;
a plurality of electrode lines extending through each of the plurality of socket regions;
a second plurality of electrode lines extending through each of the plurality of socket regions, wherein the plurality of electrode lines each extend in a first direction and the second plurality of electrode lines each extend in a second direction different than the first direction, and wherein each electrode line of the plurality of electrode lines is coupled with a respective connector that extends in a third direction different than the first direction and the second direction; and
a plurality of driver regions each associated with a memory tile of the plurality of memory tiles, wherein each driver region of the plurality of driver regions comprises a plurality of drivers each configured to drive a respective electrode line of the plurality of electrode lines.
9. The apparatus of claim 8 , further comprising:
a second plurality of driver regions associated with the plurality of memory tiles, wherein each driver region of the second plurality of driver regions comprises a plurality of drivers each configured to drive a respective electrode line of the second plurality of electrode lines.
10. The apparatus of claim 9 , wherein the plurality of driver regions each comprise a first plurality of row drivers and a first plurality of column drivers, and wherein the second plurality of driver regions each comprise a second plurality of row drivers and a second plurality of column drivers.
11. The apparatus of claim 8 , wherein each driver of the plurality of driver regions is coupled with a respective electrode line of the plurality of electrode lines via an interconnect.
12. An apparatus, comprising:
a plurality of memory tiles;
a plurality of socket regions;
a plurality of electrode lines extending through each of the plurality of socket regions, wherein each electrode line of the plurality of electrode lines comprises a first end and a second end, and wherein a first end of at least a first electrode line of the plurality of electrode lines is located within a socket region of the plurality of socket regions, and wherein a first end of at least a second electrode line of the plurality of electrode lines is located outside of the socket region; and
a plurality of driver regions each associated with a memory tile of the plurality of memory tiles, wherein each driver region of the plurality of driver regions comprises a plurality of drivers each configured to drive a respective electrode line of the plurality of electrode lines.
13. The apparatus of claim 8 , wherein each driver region of the plurality is located within a footprint of a respective memory tile of the plurality of memory tiles.