Memory device and operating method including a partial program operation and a partial erase operation thereof
There are provided a memory device and an operating method thereof. A memory device may include a memory block, peripheral circuits, and a control logic. The memory block may include a plurality of pages arranged in a vertical direction on a substrate. The peripheral circuits may perform a program operation on a selected page. The control logic may control the peripheral circuits to perform a first partial program operation of sequentially programming some of the pages up to a first page. The control logic may perform a first partial erase operation of erasing the other non-programmed pages. The control logic may perform a second partial program operation of partially programming the pages on which the first partial erase operation has been performed.
1. A method of operating a memory device including a string coupled between a source line and a bit line, the method comprising:
programming a first closest memory cell from the bit line;
programming a first closest memory cell from the source line after the first closest memory cell from the bit line is programmed;
programming a second memory cell from the bit line after the first closest memory cell from the source line is programmed;
programming a second memory cell from the source line after the second memory cell from the bit line is programmed;
programming an Nth memory cell from the bit line after the second memory cell from the source line is programmed;
programming an Nth memory cell from the source line after the Nth memory cell from the bit line is programmed;
erasing memory cells coupled between the Nth memory cell from the source line and the Nth memory cell from the bit line; and
programming the erased memory cells.
2. A method of operating a memory device including a string including a source selection transistor, a drain selection transistor and memory cells coupled between the source selection transistor and the drain selection transistor, the method comprising:
programming a first closest memory cell from the drain selection transistor;
programming a first closest memory cell from the source selection transistor after the first closest memory cell from the drain selection transistor is programmed;
programming a second memory cell from the drain selection transistor after the first closest memory cell from the source selection transistor is programmed;
programming a second memory cell from the source selection transistor after the second memory cell from the drain selection transistor is programmed;
programming an Nth memory cell from the drain selection transistor after the second memory cell from the source selection transistor is programmed;
programming an Nth memory cell from the source selection transistor after the Nth memory cell from the drain selection transistor is programmed;
erasing memory cells coupled between the Nth memory cell from the source selection transistor and the Nth memory cell from the drain selection transistor; and
programming the erased memory cells.