Photovoltaic devices and method of making
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
1. A photovoltaic device, comprising:
a layer stack; and
an absorber layer disposed on the layer stack, wherein:
the absorber layer comprises a compound comprising cadmium, selenium, and tellurium,
the compound comprising cadmium, selenium, and tellurium has a first region and a second region,
an atomic concentration of selenium varies across the absorber layer; the first region of the compound comprising cadmium, selenium, and tellurium has a thickness between 100 nanometers to 3000 nanometers,
the second region of the compound comprising cadmium, selenium, and tellurium has a thickness between 100 nanometers to 3000 nanometers,
a ratio of an average atomic concentration of selenium in the first region of the compound comprising cadmium, selenium, and tellurium to an average atomic concentration of selenium in the second region of the compound comprising cadmium, selenium, and tellurium is greater than 10, and
the compound comprising cadmium, selenium, and tellurium further comprises mercury in an amount of that varies across a thickness of the absorber layer.
2. The photovoltaic device of claim 1 , wherein a peak of a Se/(Se+Te) ratio of the absorber layer is less than 0.40.
3. The photovoltaic device of claim 1 , wherein an average atomic concentration of selenium in the absorber layer is in a range from 0.001 atomic percent to 40 atomic percent of the absorber layer.
4. The photovoltaic device of claim 1 , wherein the atomic concentration of selenium in the absorber layer has a profile comprising an exponential profile, a top-hat profile, a step-change profile, a saw-tooth profile, a square-wave profile, a power law profile, or combinations thereof.
5. The photovoltaic device of claim 1 , wherein the absorber layer comprises sulfur, oxygen, copper, chlorine, lead, zinc, mercury, or combinations thereof.
6. The photovoltaic device of claim 1 , wherein at least a portion of the compound comprising cadmium, selenium, and tellurium is a ternary compound or a quaternary compound.
7. The photovoltaic device of claim 1 , wherein the compound comprising cadmium, selenium, and tellurium further comprises zinc.
8. The photovoltaic device of claim 7 , an amount of zinc varies across a thickness of the absorber layer.
9. A photovoltaic device, comprising:
a layer stack comprising a transparent conductive oxide; and
an absorber layer disposed on the layer stack, wherein:
the absorber layer comprises a compound comprising cadmium, selenium, and tellurium,
the compound comprising cadmium, selenium, and tellurium comprising a first region disposed proximate to the layer stack relative to a second region,
the first region of the compound comprising cadmium, selenium, and tellurium is disposed at a front interface of the absorber layer,
the second region of the compound comprising cadmium, selenium, and tellurium is disposed at a back interface of the absorber layer,
the first region of the compound comprising cadmium, selenium, and tellurium has a thickness between 200 nanometers to 1500 nanometers,
the second region of the compound comprising cadmium, selenium, and tellurium has a thickness between 200 nanometers to 1500 nanometers,
a ratio of an average atomic concentration of selenium in the first region of the compound comprising cadmium, selenium, and tellurium to an average atomic concentration of selenium in the second region of the compound comprising cadmium, selenium, and tellurium is greater than 2, and
the compound comprising cadmium, selenium, and tellurium further comprises mercury in an amount that varies across a thickness of the absorber layer.
10. The photovoltaic device of claim 9 , wherein the compound comprising cadmium, selenium, and tellurium further comprises zinc.
11. The photovoltaic device of claim 10 , an amount of zinc varies across a thickness of the absorber layer.
12. The photovoltaic device of claim 9 , wherein an average atomic concentration of selenium in the absorber layer is in a range from 0.01 atomic percent to 25 atomic percent of the absorber layer.
13. The photovoltaic device of claim 12 , wherein a peak of a Se/(Se+Te) ratio of the absorber layer is located at the front interface of the absorber layer.
14. The photovoltaic device of claim 13 , wherein the peak of the Se/(Se+Te) ratio of the absorber layer is less than 0.40.
15. The photovoltaic device of claim 14 , wherein the photovoltaic device is substantially free of a cadmium sulfide layer.