IP Library Granted Patent US 10,741,461
Granted Patent B2
US 10,741,461 · App. 16/036,209 · Granted Aug 11, 2020

Fan-out semiconductor package

Inventors: Hyoung Joon Kim (Suwon-Si, KR); Kyung Seob Oh (Suwon-Si, KR); Kyoung Moo Harr (Suwon-Si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L23/053H01L23/24H01L23/3128H01L23/49816H01L23/5389H01L24/16H01L24/19H01L24/20H01L23/49827H01L2224/04105H01L2224/12105H01L2224/13101H01L2224/16225H01L2224/18H01L2224/73204H01L2924/1431H01L2924/1433H01L2924/1436H01L2924/15174H01L2924/15311H01L2924/181H01L2924/18162H01L2924/3511
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Quick Facts
Patent No.
US 10,741,461
App. No.
16/036,209
Granted
Aug 11, 2020
Kind
B2
Abstract

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole, having an active surface having a connection pad disposed thereon and an inactive surface opposing the active surface, and having a protrusion bump disposed on the connection pad; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip. In the fan-out semiconductor package, step portions of the protrusion bumps may be removed.

Claims (35)

1. A fan-out semiconductor package comprising:

a semiconductor chip having an active surface having a connection pad disposed on the active surface, and an inactive surface opposing the active surface, and including protrusion bump being disposed on the connection pad;

an encapsulant encapsulating at least a portion of the inactive surface of the semiconductor chip;

redistributing member disposed on the active surface of the semiconductor chip, the redistributing member comprising:

an insulating layer;

a redistribution layer; and

a via connecting the redistribution layer to the protrusion bump; and

a resin layer disposed between the encapsulant and the redistributing member,

wherein a first contact surface of the protrusion bump contacting the via is a planar surface and is coplanar with a second contact surface of the resin layer contacting the distributing member, and

wherein the resin layer and the encapsulant contact at least portions of side surfaces of the protrusion bump.

2. The fan-out semiconductor package of claim 1 , wherein the protrusion bump comprises copper.

3. The fan-out semiconductor package of claim 1 , further comprising an interconnection member having a through-hole,

wherein the semiconductor chip is disposed in the through-hole,

wherein the encapsulant encapsulates at least a portion of the interconnection member,

wherein the redistributing member is disposed on the interconnection member, and

wherein the interconnection member comprises:

a first insulating layer;

a first redistribution layer disposed on a first surface of the first insulating layer and contacting the redistributing member; and

a second redistribution layer disposed on a second surface opposing the first surface of the first insulating layer.

4. The fan-out semiconductor package of claim 3 , wherein the interconnection member further comprises:

a second insulating layer disposed on the first insulating layer and covering the second redistribution layer; and

a third redistribution layer disposed on the second insulating layer.

5. The fan-out semiconductor package of claim 1 , further comprising an interconnection member having a through-hole,

wherein the semiconductor chip is disposed in the through-hole,

wherein the encapsulant encapsulates at least a portion of the interconnection member,

wherein the redistributing member is disposed on the interconnection member, and

wherein the interconnection member comprises:

a first insulating layer;

a first redistribution layer and a second redistribution layer disposed respectively on opposing surfaces of the first insulating layer;

a second insulating layer disposed on the first insulating layer and covering the first redistribution layer; and

a third redistribution layer disposed on the second insulating layer and contacting the distributing member.

6. The fan-out semiconductor package of claim 5 , wherein the first insulating layer has a thickness greater than, that of the second insulating layer.

7. The fan-out semiconductor package of claim 5 , wherein the first redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.

8. The fan-out semiconductor package of claim 1 , wherein the resin layer has a third contact surface opposing the second contact surface and contacting the encapsulant, and

wherein the third contact surface is disposed on a level between an upper surface of the protrusion bump and a lower surface of the protrusion bump.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2019
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049350/0756 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 17, 2018
From: KIM, HYOUNG JOON; OH, KYUNG SEOB; HARR, KYOUNG MOO
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 046367/0047 →
Priority Claims (1)
KR 10-2016-0125840 · Sep 29, 2016 · national
Continuity (2)
Continuation 15633478 · Jun 26, 2017
Related Publication 20180323119A1 · Nov 8, 2018