IP Library Granted Patent US 10,993,333
Granted Patent B2
US 10,993,333 · App. 16/036,913 · Granted Apr 27, 2021

Methods of manufacturing ultra thin dielectric printed circuit boards with thin laminates

Inventors: Shinichi Iketani (Sunnyvale, CA); Toshiya Suzuki (Kanagawa, JP)
Assignee: SANMINA CORPORATION
H05K3/4655H05K1/119H05K3/007H05K3/0097H05K3/4673H05K3/4682H05K3/02H05K3/4664H05K2201/0191H05K2203/013
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Quick Facts
Patent No.
US 10,993,333
App. No.
16/036,913
Granted
Apr 27, 2021
Kind
B2
Abstract

A method for making an ultra-thin dielectric printed circuit board (PCB) is provided. A first side of a first conductive layer is removably coupled to a disposable base. A first ultra-thin dielectric layer and a second conductive layer are laminated to a second side of the first conductive layer, where the first ultra-thin dielectric layer is positioned between the first and second conductive layers, and the first ultra-thin dielectric layer is thinner than at least one of the first conductive layer and the second conductive layer. The second conductive layer may then be patterned to form electrical paths. The patterned second conductive layer is then filled with a dielectric filler. One or more conductive layers and one or more ultra-thin dielectric layers may then be coupled to the second conductive layer. The disposable base may then be detached from the first conductive layer.

Claims (21)

1. A method, comprising:

removably coupling a first side of a first conductive layer to a disposable base;

laminating a first ultra-thin dielectric layer and a second conductive layer to a second side of the first conductive layer, where the first ultra-thin dielectric layer is positioned between the first and second conductive layers and in direct contact with the first and second conductive layers across the entirety of the first and second conductive layers, and the first ultra-thin dielectric layer is thinner than the first conductive layer and the second conductive layer;

patterning the second conductive layer;

filling the patterned second conductive layer with a dielectric filler;

coupling at least one additional conductive layer and at least one additional ultra-thin dielectric layer to the second conductive layer; and

detaching the disposable base from the first conductive layer.

2. The method of claim 1 , wherein the one or more ultra-thin dielectric layers are thinner than at least one adjacent conductive layer.

3. The method of claim 1 , wherein all ultra-thin dielectric layers are thinner than at least one adjacent conductive layer.

4. The method of claim 1 , further comprising:

curing or partially curing the dielectric filler; and

planarizing at least one of the dielectric filler and the patterned second conductive layer.

5. The method of claim 4 , wherein the planarizing comprises planarizing the patterned second conductive layer, and further comprising:

laminating the planarized second conductive layer with a second ultra-thin dielectric layer and a third conductive layer.

6. The method of claim 1 , wherein each ultra-thin dielectric layer has thickness of 50 micron or less while the first and second conductive layers are each more than 50 micron thick.

7. The method of claim 1 , wherein each ultra-thin dielectric layer has thickness of 20 micron or less while the first and second conductive layers are each more than 20 micron thick.

8. The method of claim 1 , wherein each ultra-thin dielectric layer has thickness of 10 micron or less while the first and second conductive layers are each more than 10 micron thick.

9. The method of claim 1 , wherein the first and second conductive layers each have a thickness of 3 micron, 5 micron, 9 micron, 12 micron, 0.5 ounce copper, 1 ounce copper, or 2 ounce copper.

10. The method of claim 1 , wherein the first conductive layer, the first ultra-thin dielectric layer, the second conductive layer, the one or more conductive layers and the one or more ultra-thin dielectric layers form a first subassembly structure, and further comprising:

laminating a patterned outer conductive layer of the first subassembly structure, opposite the first conductive layer, to a first subassembly core; patterning the first conductive layer; and

laminating the patterned first conductive layer of the first subassembly structure to a second subassembly core.

Assignments (4)
SECURITY INTEREST Recorded Oct 28, 2025
From: SANMINA CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 073363/0212 →
RELEASE OF SECURITY INTEREST Recorded Jun 5, 2019
From: U.S. BANK NATIONAL ASSOCIATION, SOLELY AS NOTES COLLATERAL AGENT
To: SANMINA CORPORATION; HADCO CORPORATION; HADCO SANTA CLARA; SCI TECHNOLOGY; SENSORWISE, INC.
Reel/Frame 049378/0927 →
SECURITY INTEREST Recorded Oct 22, 2018
From: SANMINA CORPORATION
To: U.S. BANK NATIONAL ASSOCIATION, NOT IN ITS INDIVIDUAL CAPACITY BUT SOLELY AS NOTES COLLATERAL AGENT
Reel/Frame 047261/0572 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2018
From: IKETANI, SHINICHI; SUZUKI, TOSHIYA
To: SANMINA CORPORATION
Reel/Frame 046387/0995 →