Low CTE component with wire bond interconnects
A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such method may include forming a structure having wire bonds extending in an axial direction within one of more openings in an element and each wire bond spaced at least partially apart from a wall of the opening within which it extends, the element consisting essentially of a material having a coefficient of thermal expansion (“CTE”) of less than 10 parts per million per degree Celsius (“ppm/° C.”). First contacts can then be provided at a first surface of the component and second contacts provided at a second surface of the component facing in a direction opposite from the first surface, the first contacts electrically coupled with the second contacts through the wire bonds.
1. A component, comprising:
a plurality of wire bonds each extending in an axial direction within an opening of one or more openings in an element having a coefficient of thermal expansion (“CTE”) of less than 10 parts per million per degree Celsius (“ppm/° C.”) and each wire bond spaced at least partially away from a wall of the opening within which it extends;
first contacts at a first surface of the component and second contacts at a second surface of the component facing in a direction opposite from the first surface, the first contacts being first ends of the wire bonds or the first contacts being coupled to first ends of the wire bonds, and the second contacts electrically coupled with the wire bonds,
wherein the first contacts and the second contacts are within an axial distance of less than 50 microns from the wire bonds.
2. The component of claim 1 , wherein at least one of the first contacts or the second contacts are electrically coupled with the wire bonds through a redistribution layer overlying the wire bonds and overlying a surface of the element defining a plane transverse to the axial direction of the openings.
3. The component of claim 1 , wherein individual wire bonds of the plurality of wire bonds are disposed within respective openings in the element, such that each wire bond is separated from each other wire bond by material of the element.
4. The component of claim 1 , wherein some of the plurality of the wire bonds are disposed within a same opening of the plurality of openings.
5. The component of claim 1 , further comprising an electrically insulative material within the openings in contact with the wire bonds.
6. The component of claim 1 , wherein the element includes a plurality of active devices, wherein the first and second contacts are electrically coupled with one another and with at least some of the plurality of active devices.
7. The component of claim 6 , wherein the element includes a monocrystalline semiconductor region, at least some of the active devices being disposed at least partially within the monocrystalline semiconductor region, and the openings extending at least partially through the monocrystalline semiconductor region.
8. The component of claim 6 , in which wire bonds extend only partially through a thickness of the element, further comprising electrically conductive connectors extending in an axial direction from the wire bonds at least partially through a remaining portion of the thickness of the element, the connectors formed of deposited electrically conductive material.