Metal oxide layered structure and methods of forming the same
Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.
1. A method comprising:
depositing a dielectric layer over a semiconductor die encapsulated in an encapsulant;
depositing a conductive material over the dielectric layer;
forming a first native oxide on the conductive material;
exposing the first native oxide to an oxygen-containing plasma to form a metal oxide layer with a metal to oxygen ratio that is substantially 1:1, the metal oxide layer being at least 50 Å thick; and
depositing a dielectric material over the metal oxide layer.
2. The method of claim 1 , wherein the metal to oxygen ratio is between 0.9:1 and 1.1:1.
3. The method of claim 1 , further comprising forming a second native oxide on the metal oxide layer.
4. The method of claim 3 , wherein the first native oxide comprises cuprous oxide, the metal oxide layer comprises cupric oxide, and the second native oxide comprises cuprous oxide.
5. The method of claim 1 , wherein the dielectric material comprises a photo-sensitive material.
6. The method of claim 1 , wherein the metal oxide layer is less than 200 Å.
7. The method of claim 6 , wherein the metal oxide layer is less than 100 Å.
8. The method of claim 1 , wherein the oxygen-containing plasma further comprises nitrogen, hydrogen, or argon.