Semiconductor device and method of manufacture

1. A method of manufacturing a semiconductor device, the method comprising:

exposing a first region over an interposer substrate with a first photolithographic mask to form a first exposure region, the interposer substrate comprising a semiconductor material;

exposing a second region over the interposer substrate with a second photolithographic mask to form a second exposure region; and

exposing a scribe region over the interposer substrate with a third photolithographic mask different from the first photolithographic mask and the second photolithographic mask to form a third exposure region between the first exposure region and the second exposure region, wherein the third exposure region overlaps the first exposure region and the second exposure region, wherein the interposer substrate comprises a die attach region, and wherein after the exposing the scribe region at least three semiconductor devices are attached to the interposer substrate within the die attach region, wherein the third exposure region overlaps the first exposure region by about 2.5 μm.

2. The method of claim 1 , wherein the scribe region has a width of about 1400 μm.

3. The method of claim 1 , further comprising removing at least a portion of a conductive material from the scribe region after the exposing the scribe region.

4. The method of claim 3 , wherein the removing the portion of the conductive material removes all of the conductive material.

5. The method of claim 3 , wherein the removing the portion of the conductive material forms a dummy pattern of the conductive material.

6. The method of claim 5 , wherein the conductive material comprises aluminum.

7. The method of claim 3 , wherein the removing the portion of the conductive material forms an opening within a portion of a dielectric material between the conductive material and the first exposure region.

8. The method of claim 1 , further comprising encapsulating the at least three semiconductor devices.

9. A method of manufacturing a semiconductor device, the method comprising:

imaging a first region of an interposer substrate with a first photolithographic mask, the interposer substrate comprising at least one semiconductor material;

imaging a second region of the interposer substrate with the first photolithographic mask;

imaging a third region of the interposer substrate with a second photolithographic mask different from the first photolithographic mask, wherein the third region extends between the first region and the second region and into both the first region and the second region, wherein the third region comprises a conductive material and a dielectric material underlying the conductive material, the dielectric material having a first portion exposed by the conductive material;

removing at least a portion of the conductive material from the third region after the imaging the third region, wherein the removing the conductive material forms an opening within the first portion of the dielectric material; and

singulating the first region of the interposer substrate from the second region of the interposer substrate, wherein after the singulating the interposer substrate extends to a first width, the first width being larger than a maximum exposure limit of the first photolithographic mask.

10. The method of claim 9 , wherein the dielectric material comprises:

a first layer of silicon oxide;

a first layer of silicon nitride overlying the first layer of silicon oxide; and

a first layer of silicon oxide overlying the first layer of silicon nitride.

11. The method of claim 9 , wherein the third region extends into the first region a distance of 2.5 μm.

12. The method of claim 9 , further comprising attaching a first semiconductor device, a second semiconductor device, and a third semiconductor device to the first region of the interposer substrate.

13. The method of claim 12 , further comprising encapsulating the first semiconductor device, the second semiconductor device, and the third semiconductor device.

14. The method of claim 9 , wherein the removing the portion of the conductive material from the third region comprises removing all of the conductive material from the third region.

15. The method of claim 9 , wherein the third region has a width of about 1400 μm.

16. A method of manufacturing a semiconductor device, the method comprising:

forming a redistribution layer over an interposer substrate;

forming a first dielectric layer over the redistribution layer;

forming a second dielectric layer over the first dielectric layer;

forming contact pads located over the second dielectric layer; and

forming a passivation layer over the contact pads, wherein the first dielectric layer has a first sidewall aligned with a second sidewall of the second dielectric layer, and wherein the first dielectric layer has a third sidewall aligned with a fourth sidewall of the second dielectric layer, wherein a distance between the first sidewall to the second sidewall is larger than an exposure limit of an exposure mark, wherein the first dielectric layer comprises silicon oxide and the second dielectric layer comprises silicon nitride.

17. The method of claim 16 , wherein the interposer substrate comprises a die attach region and wherein the first sidewall and the second sidewall are outside of the die attach region in a top down view.

18. The method of claim 17 , wherein at least three semiconductor devices are attached to the interposer substrate within the die attach region.

19. The method of claim 17 , further comprising a dummy pattern in a scribe region adjacent to the die attach region, wherein the dummy pattern has a first thickness and a first one of the contact pads has the first thickness.

20. The method of claim 16 , further comprising through substrate vias extending through the interposer substrate.