High aspect ratio gates
Embodiments are directed to a method of forming a feature of a semiconductor device. In one or more embodiments, the feature is a gate, and the method includes forming a substrate and forming a gate material extending over a major surface of the substrate. The method further includes forming a trench extending through the gate material and into the substrate in a first direction, wherein the trench further extends through the gate material and the substrate in a second direction. The method further includes filling the trench with a fill material and forming individual gates from the gate material, wherein the individual gates extend along a third direction.
1. A method of forming a semiconductor structure, the method comprising:
forming a substrate having a major surface;
forming a multi-layered stack over the major surface of the substrate, wherein the multi-layered stack comprises a first multi-layered stack segment, a second multi-layered stack segment, and a third multi-layered stack segment positioned between the first multi-layered stack segment and the second multi-layered stack segment;
wherein the first multi-layered stack segment is separated from the third multi-layered stack segment by a first trench; and
filling the first trench with a fill material such that the fill material physically couples the first multi-layered stack segment to the third multi-layered stack segment;
selectively removing portions of the third multi-layered stack to form individual high aspect ratio multi-layered stack segments;
wherein the fill material provides a sole source of support that prevents the individual high aspect ratio multi-layered segments from bending during at least some operations of the method.
2. The method of claim 1 wherein each of the individual high aspect ratio multi-layered segments comprises a fin.
3. The method of claim 1 , wherein forming the individual multi-layered stack segments occurs subsequent to forming the first trench.
4. The method of claim 1 , wherein the fill material in the first trench comprises a first anchor.
5. The method of claim 2 , wherein the fin comprises a conductive gate structure.
6. The method of claim 1 , wherein the second multi-layered stack segment is separated from the third multi-layered stack segment by a second trench.
7. The method of claim 6 further comprising:
prior to selectively removing portions of the third multi-layered stack to form individual high aspect ratio multi-layered stack segments, filling the second trench with the fill material such that the fill material physically couples the second multi-layered stack segment to the third multi-layered stack segment;
wherein the fill material in the first trench and the fill material in the second trench provide the sole sources of support that prevent the individual high aspect ratio multi-layered stack segments from bending during at least some operations of the method.
8. The method of claim 7 , wherein:
the fill material in the first trench comprises a first anchor; and
the fill material in the second trench comprises a second anchor.
9. The method of claim 8 , wherein the individual multi-layered stack segments comprise individual multi-layered gate stacks.
10. The method of claim 1 , wherein forming the individual multi-layered gate stacks occurs subsequent to forming the first trench and subsequent to forming the second trench.
11. A method of forming a semiconductor structure, the method comprising:
forming a substrate having a major surface;
forming a multi-layered stack over the major surface of the substrate, wherein the multi-layered stack comprises a first multi-layered stack segment, a second multi-layered stack segment, and a third multi-layered stack segment positioned between the first multi-layered stack segment and the second multi-layered stack segment;
forming a first anchor extending into the multi-layered stack and positioned between the first multi-layered stack segment and third multi-layered stack segment;
forming a second anchor extending into the multi-layered stack and positioned between the third multi-layered stack segment and the second multi-layered stack segment;
selectively removing portions of the third multi-layered stack to form individual high aspect ratio multi-layered stack segments;
wherein the first anchor and the second anchor provide a sole sources of support that prevent multi-layered stack segment from bending along a height dimension of the individual high aspect ratio multi-layered stack segments.
12. The method of claim 11 , wherein:
the multi-layered stack comprises a multi-layered gate stack;
the multi-layered stack segment comprises a first multi-layered gate stack segment;
the second multi-layered stack segment comprises a second multi-layered gate stack segment;
the third multi-layered stack segment comprises a third multi-layered gate stack segment;
the individual high aspect ratio multi-layered stack segments comprise individual high aspect ratio multi-layered gate stack segments;
the first anchor is physically coupled to the first multi-layered gate stack segment and the individual high aspect ratio multi-layered gate stack segments through a sidewall of the first multi-layered gate stack segment and sidewalls of the first individual high aspect ratio multi-layered gate stack segments; and
the second anchor is physically coupled to the second multi-layered gate stack segment and the individual high aspect ratio multi-layered gate stack segments through a sidewall of the second multi-layered gate stack segment and sidewalls of the individual high aspect ratio multi-layered gate stack segments.
13. The method of claim 12 , wherein:
the first anchor extends into the substrate in a first direction and a second direction, wherein the first direction is substantially perpendicular to the second direction;
a top portion of the first anchor extends above the major surface of the substrate;
the first anchor further extends through the substrate and gate material of the multi-layered gate stack in a third direction;
the second anchor extends into the substrate in the first direction and the second direction;
a top portion of the second anchor extends above the major surface of the substrate; and
the second anchor further extends through the substrate and the gate material of the multi-layered gate stack in the third direction.