Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.
1. A method for depositing a layer on a substrate using an electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) unbalanced magnetron sputtering apparatus, the method comprising:
disposing a first cathode target assembly inside a vacuum chamber, the first cathode target assembly comprising the unbalanced magnetron;
positioning a second cathode assembly concentrically with respect to the first cathode target assembly inside the vacuum chamber, the second cathode assembly comprising an anode, a gap electrode, a first magnet, and a second magnet, the anode positioned such that a gap is formed between the anode and the gap electrode, the first magnet and the second magnet each comprising a ring shape, the first magnet comprising a first pole surface having only a single polarity, the second magnet comprising a second pole surface having only a single polarity, the first pole surface being substantially parallel to the second pole surface, the single polarity of the first pole surface being the same as the single polarity of the second pole surface, the first pole surface facing the second pole surface, the first pole surface disposed adjacent to the second pole surface, thereby causing a cusp magnetic field in the gap;
coupling a radio frequency power supply to the second cathode assembly;
coupling a pulsed power supply to the first cathode target assembly;
coupling an inductor between the second cathode assembly and ground; and
coupling the inductor to a connector, the connector separated from a cylindrical shield by a first isolator, the cylindrical shield disposed around the anode and the gap electrode, the cylindrical shield separated from the anode by a second isolator, the cylindrical shield separated from the gap electrode by a third isolator.
2. The method, as defined by claim 1 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a portion of the plurality of electric field lines in the gap being substantially perpendicular to at least a portion of the magnetic field lines in the gap.
3. The method, as defined by claim 1 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a portion of the plurality of electric field lines in the gap being substantially parallel to at least a portion of the plurality of magnetic field lines in the gap.
4. The method, as defined by claim 1 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a first portion of the plurality of electric field lines in the gap being substantially perpendicular to at least a first portion of the plurality of magnetic field lines in the gap simultaneously with at least a second portion of the plurality of electric field lines in the gap being substantially parallel to at least a second portion of the plurality of magnetic field lines in the gap.
5. The method, as defined by claim 1 , further comprising positioning a substrate holder in the vacuum chamber.
6. The method, as defined by claim 5 , further comprising coupling a substrate bias voltage to the substrate holder, the substrate bias voltage comprising a range of −10V to −200 V.
7. The method, as defined by claim 1 , wherein the first cathode target assembly comprises a round shape.
8. The method, as defined by claim 1 , wherein the second cathode assembly comprises a ring shape.
9. The method, as defined by claim 1 , further comprising providing a feed gas, the feed gas comprising a mixture of a noble gas and a gas comprising atoms of the first cathode target assembly.
10. The method, as defined by claim 1 , wherein power applied to the first cathode target assembly and power applied to the second cathode assembly are synchronous.
11. An electrically and magnetically enhanced ionized physical deposition (I-PVD) unbalanced magnetron sputtering apparatus that deposits a layer on a substrate, the apparatus comprising:
a first cathode target assembly configured to be disposed inside a vacuum chamber, the first cathode target assembly comprising the unbalanced magnetron;
a second cathode assembly configured to be positioned concentrically with respect to the first cathode target assembly inside the vacuum chamber, the second cathode assembly comprising an anode, a gap electrode, a first magnet, and a second magnet, the anode positioned such that a gap is formed between the anode and the gap electrode, the first magnet and the second magnet each comprising a ring shape, the first magnet comprising a first pole surface having only a single polarity, the second magnet comprising a second pole surface having only a single polarity, the first pole surface being substantially parallel to the second pole surface, the single polarity of the first pole surface being the same as the single polarity of the second pole surface, the first pole surface facing the second pole surface, the first pole surface disposed adjacent to the second pole surface, thereby causing a cusp magnetic field in the gap;
a radio frequency power supply coupled to the second cathode assembly;
a pulsed power supply coupled to the first cathode target assembly; and
an inductor coupled between the second cathode assembly and ground, wherein the inductor is coupled to a connector, the connector separated from a cylindrical shield by a first isolator, the cylindrical shield disposed around the anode and the gap electrode, the cylindrical shield separated from the anode by a second isolator, the cylindrical shield separated from the gap electrode by a third isolator.
12. The apparatus, as defined by claim 11 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a portion of the plurality of electric field lines in the gap being substantially perpendicular to at least a portion of the plurality of magnetic field lines in the gap.
13. The apparatus, as defined by claim 11 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a portion of the plurality of electric field lines in the gap being substantially parallel to at least a portion of the plurality of magnetic field lines in the gap.
14. The apparatus, as defined by claim 11 , wherein the anode and gap electrode cause a plurality of electric field lines in the gap, the first magnet and the second magnet causing a plurality of magnetic field lines in the gap, at least a first portion of the plurality of electric field lines in the gap being substantially perpendicular to at least a first portion of the plurality of magnetic field lines in the gap simultaneously with at least a second portion of the plurality of electric field lines in the gap being substantially parallel to at least a second portion of the plurality of magnetic field lines in the gap.
15. The apparatus, as defined by claim 11 , further comprising a substrate holder configured to be disposed within the vacuum chamber.
16. The apparatus, as defined by claim 15 , wherein the substrate holder is operatively coupled to a substrate bias voltage comprising a range of −10 V to −200 V.
17. The apparatus, as defined by claim 11 , wherein the first cathode target assembly comprises a round shape.
18. The apparatus, as defined by claim 11 , wherein the second cathode assembly comprises a ring shape.
19. The apparatus, as defined by claim 11 , further comprising a feed gas, the feed gas comprising a mixture of a noble gas and a gas comprising atoms of the first cathode target assembly.
20. The apparatus, as defined by claim 11 , wherein power applied to the first cathode target assembly and power applied to the second cathode assembly are synchronous.
21. The method, as defined by claim 1 , wherein the inductor is electrically coupled to the gap electrode.
22. The apparatus, as defined by claim 11 , wherein the inductor is electrically coupled to the gap electrode.