Solid-state imaging device and electronic apparatus
Provided are a solid-state imaging device and an electronic apparatus that include a charge storage unit. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to the hole.
1. A solid-state imaging device, comprising:
a pixel array including a plurality of unit pixels; and
a circuit configured to control an operation of the plurality of unit pixels,
wherein each of the plurality of unit pixels includes:
a photodiode configured to generate a charge;
a trench capacitor configured to store the charge generated by the photodiode; and
a reverse-side deep trench isolation (RDTI) joined to the trench capacitor,
wherein the RDTI is adjacent to the trench capacitor.
2. The solid-state imaging device according to claim 1 , wherein
the trench capacitor is between the photodiode of a first unit pixel of the plurality of unit pixels and the photodiode of a second unit pixel of the plurality of unit pixels, and
the first unit pixel is adjacent to the second unit pixel.
3. The solid-state imaging device according to claim 1 , wherein
each of the plurality of unit pixels further includes a plurality of photodiodes,
the trench capacitor is one of between the plurality of photodiodes or between a first photodiode of the plurality of photodiodes of a first unit pixel of the plurality of unit pixels and a second photodiode of the plurality of photodiodes of a second unit pixel of the plurality of unit pixels, and
the first unit pixel is adjacent to the second unit pixel.
4. The solid-state imaging device according to claim 1 , wherein the trench capacitor penetrates a substrate.
5. The solid-state imaging device according to claim 1 , wherein
a potential of one end of the trench capacitor is one of a ground potential, a power-supply potential, or a specific potential.
6. The solid-state imaging device according to claim 5 , wherein
the potential of the one end of the trench capacitor is set at a first potential at a storing time of the photodiode,
the potential of the one end of the trench capacitor is set at a second potential at a reading time of the photodiode, and
the first potential is different from the second potential.
7. The solid-state imaging device according to claim 1 , wherein the solid-state imaging device is of a backside-illuminated type.
8. An electronic apparatus, comprising:
a solid-state imaging device including:
a pixel array including a plurality of unit pixels; and
a circuit configured to control an operation of the plurality of unit pixels, wherein
each of the plurality of unit pixels includes:
a photodiode configured to generate a charge;
a trench capacitor configured to store the charge generated by the photodiode; and
a reverse-side deep trench isolation (RDTI) joined to the trench capacitor,
wherein the RDTI is adjacent to the trench capacitor;
a signal processing circuit configured to process an output signal output from the solid-state imaging device; and
an optical system configured to provide incident light to the solid-state imaging device.