Method for removing a metal deposit arranged on a surface in a chamber

1. A method for removing a metal deposit arranged on a surface in a chamber, said method including repeatedly performing a sequence including the following:

a) a first phase of injecting chemical species suitable for oxidizing said metal deposit, first phase

said injection of chemical species suitable for oxidizing said metal deposit being done in the form of one or several pulses;

b) a second phase of injecting chemical species suitable for volatilizing the oxidized metal deposit, said second phase b) being performed after an end of the first phase a), second phase

said injection of chemical species suitable for volatilizing the oxidized metal deposit being done in the form of one or several pulses; and

adjusting the duration of the one or several pulses in phase b) to form a barrier against a passivation on the metal deposit, so that a layer of the oxidized metal deposit is not fully volatilized.

2. The method according to claim 1 , wherein during each pulse in phase b), the oxidized metal deposit is at least partially volatilized by the chemical species.

3. The method according to claim 2 , wherein the duration of the injection pulses ranges from 0.02 s to 5 s, and the delay between two consecutive pulses, if any, ranges from 0.02 s to 10 s.

4. The method according to claim 1 , wherein the sequence includes a phase between phase a) and phase b) during which no chemical species is injected into the chamber.

5. The method according to claim 1 , wherein the sequence includes an at least partial chamber purging phase between phase a) and phase b).

6. The method according to claim 1 , including, between two consecutive sequences, a step in which no chemical species is injected into the chamber and/or the chamber is at least partially purged.

7. The method according to claim 1 , wherein the chamber is maintained at a temperature between 20 and 250° C.

8. The method according to claim 1 , wherein phase a) includes the injection of at least one of the following oxidizing species: oxygen, ozone, and nitrous oxide.

9. The method according to claim 1 , wherein the chemical species injected in phase b) include hexafluoroacetylacetone.

10. The method according to claim 1 , wherein the chemical species injected in phase a) and/or in phase b) are plasma-activated.

11. A method for cleaning metal residues arranged on the inner walls of a chemical vapour deposition chamber, wherein said metal residues are removed using the method of claim 1 .

12. A method for etching a metal deposit deposited in excess on a surface, wherein at least a portion of said metal deposit is removed by means of the method of claim 1 .

13. The method according to claim 12 , characterized in that prior to the first sequence of a) and b) phases, a mask is affixed on the metal deposit in a localized manner.

14. The method according to claim 13 , characterized in that it includes the following steps:

the mask is affixed to each area of the metal deposit that is to be preserved;

the sequence of a) and b) phases is performed one or several times to remove the excess metal deposit in each area not covered by the mask.

15. The method according to claim 1 , characterized in that the sequence of a) and b) phases is repeated as many times as necessary to remove the excess metal deposit.