Light-emitting device and method for manufacturing the same
View Patent ↗A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
1. A method for manufacturing a light-emitting device, comprising:
forming a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer on a substrate in sequence;
forming a first patterned photoresist layer on the second type semiconductor layer;
etching the second semiconductor layer, the light-emitting layer and a portion of the first type semiconductor layer to form an opening by using the first patterned photoresist layer as a mask, wherein the first type semiconductor layer exposed in the opening has a first width;
forming a sacrifice layer covering the first type semiconductor layer and the second type semiconductor layer after removing the first patterned photoresist layer;
forming a second patterned photoresist layer on the sacrifice layer;
patterning the sacrifice layer by the second patterned photoresist layer, wherein the first type semiconductor layer exposed from the sacrifice layer in the opening has a second width, and the second width is smaller than the first width;
forming a third patterned photoresist layer covering the sacrifice layer and a portion of the first type semiconductor layer, wherein the first type semiconductor layer exposed from the third patterned photoresist layer in the opening has a third width, and the third width is smaller than the second width;
etching the first type semiconductor layer by using the third patterned photoresist layer and the sacrifice layer as a mask;
removing the sacrifice layer and the third patterned photoresist layer;
forming an insulating layer covering a portion of the first type semiconductor layer in the opening; and
forming a conductive layer covering the insulating layer in the opening.
2. The method for manufacturing the light-emitting device according to claim 1 , after the step of etching the first type semiconductor layer by using the third patterned layer and the sacrifice layer as the mask, further comprising forming a first sidewall and a second sidewall of the first type semiconductor layer, wherein a first angle is formed between the first sidewall and the substrate, a second angle is formed between the second sidewall and the substrate, and the first angle is smaller than the second angle.
3. The method for manufacturing the light-emitting device according to claim 1 , after the step of etching the first type semiconductor layer by using the third patterned layer and the sacrifice layer as the mask, further comprising forming a first sidewall and a second sidewall of the first type semiconductor layer, wherein a length of the first sidewall projected to the substrate is larger than a length of the second sidewall projected to the substrate.
4. The method for manufacturing the light-emitting device according to claim 1 , wherein the sacrifice layer has an etching rate smaller than the third patterned photoresist layer.
5. The method for manufacturing the light-emitting device according to claim 1 , wherein the step of forming the opening further comprises forming a first opening and a second opening, and a width of the first type semiconductor layer exposed in the first opening which is projected to the substrate is larger than a width of the first type semiconductor layer exposed in the second opening which is projected to the substrate.