Three-dimensional semiconductor memory devices including through-interconnection structures
A three-dimensional semiconductor memory device includes a peripheral logic structure including a plurality of peripheral logic circuits disposed on a semiconductor substrate, a horizontal semiconductor layer disposed on the peripheral logic structure, an electrode structure including a plurality of electrodes and insulating layers vertically and alternately stacked on the horizontal semiconductor layer, and a through-interconnection structure penetrating the electrode structure and the horizontal semiconductor layer and including a through-plug connected to the peripheral logic structure. A sidewall of a first insulating layer of the insulating layers is spaced apart from the through-plug by a first distance. A sidewall of a first electrode of the electrodes is spaced apart from the through-plug by a second distance greater than the first distance.
1. A three-dimensional (3D) semiconductor memory device comprising:
a peripheral logic structure comprising a plurality of peripheral logic circuits disposed on a semiconductor substrate;
a horizontal semiconductor layer disposed on the peripheral logic structure;
an electrode structure comprising a plurality of electrodes and insulating layers vertically and alternately stacked on the horizontal semiconductor layer; and
a through-interconnection structure penetrating the electrode structure and the horizontal semiconductor layer and comprising a through-plug connected to the peripheral logic structure,
wherein a sidewall of a first insulating layer of the insulating layers is spaced apart from the through-plug by a first distance, and wherein a sidewall of a first electrode of the electrodes is spaced apart from the through-plug by a second distance greater than the first distance,
wherein the through-interconnection structure further comprises a through-insulating pattern made entirely of a single insulating material contacting the through-plug, the through-insulating pattern having protrusions that extend from the through-insulating pattern towards the electrodes to entirely fill recesses between the insulating layers.
2. The 3D semiconductor memory device of claim 1 , wherein a sidewall of the horizontal semiconductor layer is spaced apart from the through-plug by a third distance, and the third distance is greater than a minimum distance between a sidewall of the electrode structure and the through-plug.
3. The 3D semiconductor memory device of claim 2 , wherein the third distance between the sidewall of the horizontal semiconductor layer and the through-plug is different from the second distance.
4. The 3D semiconductor memory device of claim 1 , wherein the horizontal semiconductor layer is closer to the first electrode than the first insulating layer.
5. The 3D semiconductor memory device of claim 1 , wherein a distance between the through-plug and a second insulating layer corresponding to an uppermost one of the insulating layers is greater than the first distance.
6. The 3D semiconductor memory device of claim 1 , wherein distances between the through-plug and sidewalls of the electrodes increase as a vertical distance from the horizontal semiconductor layer to each of the electrodes increases.
7. The 3D semiconductor memory device of claim 1 , wherein distances between the through-plug and sidewalls of the insulating layers increase as a vertical distance from the horizontal semiconductor layer to each of the insulating layers increases.
8. The 3D semiconductor memory device of claim 1 , wherein a bottom width of a bottom surface of the through-insulating pattern is less than a top width of a top surface of the through-insulating pattern.
9. The 3D semiconductor memory device of claim 1 , wherein the insulating layers of the electrode structure include a first insulating material, and wherein the through-insulating pattern includes a second insulating material different from the first insulating material.
10. The 3D semiconductor memory device of claim 1 , wherein the horizontal semiconductor layer includes a cell array region and a connection region, wherein the electrode structure extends from the cell array region onto the connection region and has a stepped structure on the connection region, and wherein the through-interconnection structure is spaced apart from the stepped structure of the electrode structure.
11. The 3D semiconductor memory device of claim 10 , further comprising:
cell vertical structures penetrating the electrode structure on the cell array region; and
dummy vertical structures penetrating the stepped structure of the electrode structure on the connection region, wherein each of the cell and dummy vertical structures comprises:
a semiconductor pattern connected to the horizontal semiconductor layer; and
a data storage pattern surrounding a sidewall of the semiconductor pattern.
12. The 3D semiconductor memory device of claim 1 , further comprising: contact plugs connected to the electrodes of the electrode structure; and a conductive line connecting the through-plug to one of the contact plugs.
13. A three-dimensional (3D) semiconductor memory device comprising:
a peripheral logic structure comprising a plurality of peripheral logic circuits disposed on a semiconductor substrate;
a horizontal semiconductor layer disposed on the peripheral logic structure;
an electrode structure comprising a plurality of electrodes and insulating layers which are vertically and alternately stacked on the horizontal semiconductor layer, the electrode structure having a plurality of recess regions between the insulating layers vertically adjacent to each other;
a through-insulating pattern made entirely of a single first insulating material penetrating a portion of the electrode structure and a portion of the horizontal semiconductor layer and entirely filling the recess regions of the electrode structure; and
a plurality of through-plugs penetrating the through-insulating pattern and connected to the peripheral logic structure,
wherein the through-insulating pattern further comprises protrusions that extend from the through-insulating pattern towards the electrode structure to entirely fill recesses between the insulating layers.
14. The 3D semiconductor memory device of claim 13 , wherein a sidewall of the horizontal semiconductor layer is spaced apart from a first through-plug of the through-plugs by a first distance, and wherein a sidewall of a lowermost electrode of the electrodes is spaced apart from the first through-plug by a second distance different from the first distance.
15. The 3D semiconductor memory device of claim 14 , wherein the first distance is greater than a minimum distance between the first through-plug and a sidewall of the electrode structure, which has the recess regions.
16. The 3D semiconductor memory device of claim 13 , wherein the insulating layers of the electrode structure include a second insulating material different from the first insulating material of the through-insulating pattern.
17. The 3D semiconductor memory device of claim 13 , wherein a bottom width of a bottom surface of the through-insulating pattern is less than a top width of a top surface of the through-insulating pattern.
18. The 3D semiconductor memory device of claim 13 , wherein distances between the through-plugs and the recessed sidewalls of the electrodes increase as a vertical distance from the horizontal semiconductor layer to each of the electrodes increases.
19. A three-dimensional (3D) semiconductor memory device comprising:
a peripheral logic structure comprising a plurality of peripheral logic circuits disposed on a semiconductor substrate;
a horizontal semiconductor layer disposed on the peripheral logic structure, an electrode structure comprising a plurality of electrodes and insulating layers vertically and alternately stacked on the horizontal semiconductor layer; and
a through-interconnection structure penetrating the electrode structure and the horizontal semiconductor layer and comprising, a through-plug connected to the peripheral logic structure,
wherein the through-plug is spaced apart from a sidewall of the horizontal semiconductor layer by a first distance, and the first distance is greater than a minimum distance between a sidewall of the electrode structure and the through-plug, and
wherein the through-interconnection structure further comprises a through-insulating pattern made entirely of a single insulating material contacting the through-plug, the through-insulating pattern having protrusions that extend from the through-insulating pattern towards the electrode structure to entirely fill recesses between the insulating layers.