IP Library Granted Patent US 11,099,078
Granted Patent B1
US 11,099,078 · App. 16/110,528 · Granted Aug 24, 2021

Acoustic sensor with temperature structure

Inventors: Robert Littrell (Boston, MA); Yu Hui (Boston, MA); Craig Core (Boston, MA); Ronald Gagnon (Boston, MA)
Assignee: Vesper Technologies, Inc.
G01K1/14G01H3/00G01K7/18
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,099,078
App. No.
16/110,528
Granted
Aug 24, 2021
Kind
B1
Abstract

An acoustic sensor has a MEMS die with MEMS structure. Among other things, the MEMS structure includes a diaphragm configured to mechanically respond to incident acoustic signals, and a temperature sensor member configured to detect temperature.

Claims (43)

1. An acoustic sensor comprising:

a MEMS die having a MEMS structure,

the MEMS structure including a diaphragm configured to mechanically respond to incident acoustic signals,

the MEMS structure including a temperature sensor member configured to detect temperature,

a package forming an interior chamber with an aperture, the MEMS die being mounted within the interior chamber and adjacent to the aperture to receive incoming acoustic signals,

the aperture exposing the interior chamber to the environment external to the interior chamber, and

the MEMS die being positioned so that the temperature sensor member is directly exposed to and across from the aperture.

2. The acoustic sensor of claim 1 , wherein the diaphragm is contiguous with the temperature sensor member.

3. The acoustic sensor of claim 1 , wherein the diaphragm includes the temperature sensor member.

4. The acoustic sensor of claim 1 , wherein one or both of the diaphragm and temperature sensor member form a cantilever.

5. The acoustic sensor of claim 1 , wherein the temperature sensor member comprises a resistor formed from metal.

6. The acoustic sensor of claim 5 , wherein the metal includes at least one of molybdenum, platinum, aluminum, aluminum-copper, and nickel.

7. The acoustic sensor of claim 1 , wherein the temperature sensor member comprises a resistor formed from a non-metal.

8. The acoustic sensor of claim 7 , wherein the non-metal comprises doped polysilicon.

9. The acoustic sensor of claim 1 , wherein the diaphragm includes piezoelectric material to produce a signal when actuated.

10. The acoustic sensor of claim 9 , wherein the temperature sensor member includes the piezoelectric material.

11. The acoustic sensor of claim 9 , wherein the piezoelectric material includes at least one of aluminum nitride, aluminum scandium nitride, zinc oxide, and lead zirconate titanate.

12. The acoustic sensor of claim 1 , wherein the temperature sensor member comprises a resistor having a resistance.

13. The acoustic sensor of claim 12 , further including temperature circuitry configured to cooperate with the resistor to detect the resistance of the resistor, the resistance configured to vary as a function of the temperature of the resistor.

14. The acoustic sensor of claim 13 , wherein the temperature circuitry comprises a Wheatstone Bridge.

15. An acoustic sensor comprising:

a MEMS die having a MEMS structure,

the MEMS structure including a diaphragm configured to mechanically respond to incident acoustic signals, and

the MEMS structure including a temperature sensor member configured to detect temperature,

wherein one or both of the diaphragm and temperature sensor member form a cantilever.

16. The acoustic sensor of claim 15 wherein the diaphragm is contiguous with the temperature sensor member.

17. The acoustic sensor of claim 15 , wherein the diaphragm includes the temperature sensor member.

18. The acoustic sensor of claim 15 , further comprising a package forming an interior chamber with an aperture, the MEMS die being mounted within the interior chamber and adjacent to the aperture to receive incoming acoustic signals, the aperture exposing the interior chamber to the environment external to the interior chamber.

19. The acoustic sensor of claim 15 , wherein the temperature sensor member comprises a resistor formed from metal.

20. The acoustic sensor of claim 19 , wherein the metal includes at least one of molybdenum, platinum, aluminum, aluminum-copper, and nickel.

21. The acoustic sensor of claim 15 , wherein the temperature sensor member comprises a resistor formed from a non-metal.

22. The acoustic sensor of claim 21 , wherein the non-metal comprises doped polysilicon.

23. The acoustic sensor of claim 15 , wherein the diaphragm includes piezoelectric material to produce a signal when actuated.

24. The acoustic sensor of claim 23 , wherein the temperature sensor member includes the piezoelectric material.

25. The acoustic sensor of claim 23 , wherein the piezoelectric material includes at least one of aluminum nitride, aluminum scandium nitride, zinc oxide, and lead zirconate titanate.

26. The acoustic sensor of claim 15 , wherein the temperature sensor member comprises a resistor having a resistance.

27. The acoustic sensor of claim 26 , further including temperature circuitry configured to cooperate with the resistor to detect the resistance of the resistor, the resistance configured to vary as a function of the temperature of the resistor.

28. The acoustic sensor of claim 27 , wherein the temperature circuitry comprises a Wheatstone Bridge.

29. A MEMS sensor comprising:

a substrate and MEMS structure, the MEMS structure including a diaphragm configured to mechanically respond to incident acoustic signals, the diaphragm having an electrically conductive electrode for interfacing with external devices, the diaphragm being coupled to the substrate in a cantilevered manner, the MEMS structure including a temperature sensor member configured to detect temperature; and

temperature circuitry configured to cooperate with the temperature sensor member to detect a property of the temperature sensor member in response to temperature.

30. The MEMS sensor of claim 29 , further comprising a first die and a second die, the first die comprising the substrate and MEMS structure, the second die comprising the temperature circuitry.

31. The MEMS sensor of claim 30 , further comprising a package containing the first and second dies, the package forming an interior chamber with an aperture, the first die being mounted within the interior chamber and adjacent to the aperture to receive incoming acoustic signals, the aperture exposing the interior chamber to the environment external to the external chamber.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2025
From: QUALCOMM TECHNOLOGIES, INC.
To: QUALCOMM INCORPORATED
Reel/Frame 069818/0431 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2022
From: VESPER TECHNOLOGIES INC.
To: QUALCOMM TECHNOLOGIES, INC.
Reel/Frame 061424/0533 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2022
From: LITTRELL, ROBER; HUI, YU; CORE, CRAIG; GAGNON, RONALD
To: VESPER TECHNOLOGIES INC.
Reel/Frame 060601/0646 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2021
From: LITTRELL, ROBERT; HUI, YU; CORE, CRAIG; GAGNON, RONALD
To: VESPER TECHNOLOGIES, INC.
Reel/Frame 056305/0722 →
Continuity (1)
Provisional Application 62550218 · Aug 25, 2017
Cited By (9)
US 12,329,033 US 12,335,687 US 12,391,546 US 12,395,798 US 12,549,891 US 12,575,325 US 12,635,414 US 12,647,722 US 12,721,040