PLASMA PROCESSING APPARATUS
Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.
1 . A plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein
a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.
2 . The plasma processing apparatus according to claim 1 , wherein
the film formed of the second dielectric is disposed to cover a top surface of the outer circumferential protruding portion, and the sample is placed and held on a top surface of the film formed of the second dielectric disposed on the outer circumferential protruding portion and top surfaces of a plurality of the projections.
3 . The plasma processing apparatus according to claim 1 , wherein
a gap is formed between the top surface of the film formed of the second dielectric disposed on a center side of the outer circumferential protruding portion and the sample, and the sample is placed on the projection to be held on the sample stage.
4 . The plasma processing apparatus according to claim 1 , wherein
the film formed of the second dielectric is disposed to cover the top surface of the plate-like member excluding the top surface of the plate-like member in the periphery including a lower end of the projection.
5 . The plasma processing apparatus according to claim 1 , wherein
the height of the projection is equal to or less than 20 μm and a diameter of the top-portion top surface is equal to 2 mm or less.
6 . The plasma processing apparatus according to claim 1 , wherein
the thickness of the second dielectric film is set to 2 μm to 10 μm.
7 . The plasma processing apparatus according to claim 1 , wherein
a ratio of an area of a portion covered with the film formed of the second dielectric on the top surface of the plate-like member with respect to an area of the entire top surface is 90% or more.
8 . The plasma processing apparatus according to claim 1 , wherein
the first dielectric contains aluminum oxide and the second dielectric contains yttrium oxide.