Method of fabricating a semiconductor package
Provided is a method of fabricating a semiconductor package. The method includes preparing a package substrate having a substrate pad, and mounting a semiconductor chip on the substrate pad. Mounting the semiconductor chip includes forming a resin layer containing a solder and reducing agent granules having a first capsule layer, between a chip pad of the semiconductor chip and the substrate pad, and bonding the chip pad to the substrate pad using laser irradiated to the semiconductor chip.
1. A method of fabricating a semiconductor package, the method comprising:
preparing a package substrate having a substrate pad; and
mounting a semiconductor chip on the substrate pad,
wherein mounting the semiconductor chip comprises:
forming a resin layer between a chip pad of the semiconductor chip and the substrate pad, the resin layer comprising a solder and reducing agent granules having a first capsule layer a second capsule layer in the first capsule layer, and curing agent granules in the second capsule layer; and
bonding the chip pad to the substrate pad using laser irradiated to the semiconductor chip,
wherein bonding the chip pad to the substrate pad comprises:
removing the first capsule layer by heat generated from the laser;
removing first to third metal oxide layers on the substrate pad, the solder and the chip pad using the reducing agent granules; and
connecting the chip pad to the substrate pad.
2. The method of fabricating a semiconductor package of claim 1 , wherein the second capsule layer has a melting point higher than the melting point of the first capsule layer.
3. The method of fabricating a semiconductor package of claim 1 , wherein the first capsule layer comprises polyphenylene sulfide and the second capsule layer comprises polyether ether ketone.
4. The method of fabricating a semiconductor package of claim 1 , wherein the resin layer further comprises a base material layer.
5. The method of fabricating a semiconductor package of claim 4 , further comprising:
removing the second capsule layer using the heat generated by the laser; and
curing the base material layer using the curing agent granules.
6. The method of fabricating a semiconductor package of claim 1 , wherein the curing agent granules comprise aliphatic amines, aromatic amines, cycloaliphatic amines, phenalkamines, imidazoles, carboxylic acids, anhydrides, polyamide-based hardeners, phenolic curing agents, or waterborne curing agents.
7. The method of fabricating a semiconductor package of claim 1 , wherein the reducing agent granules comprise bulky group-substituted hydroxyl compounds or carboxylic acids.
8. The method of fabricating a semiconductor package of claim 1 , wherein mounting the semiconductor chip further comprises providing the semiconductor chip on the resin layer.
9. The method of fabricating a semiconductor package of claim 1 , wherein the solder comprises a solder ball, and
mounting the semiconductor chip comprises:
forming the solder ball on the substrate pad; and
providing the semiconductor chip on the solder ball.
10. The method of fabricating a semiconductor package of claim 1 , wherein the resin layer further comprises:
a base material layer; and
a curing agent which is mixed in the base material layer to cure the base material layer by the heat of the laser.
11. The method of fabricating a semiconductor package of claim 1 , wherein bonding the chip pad to the substrate pad further comprises pressing the semiconductor chip into the package substrate by using a transparent block.