Dechuck control method and plasma processing apparatus

1. A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck provided in a plasma processing apparatus, the method comprising:

dechucking the processed object by lifting the processed object with a supporting mechanism, the dechucking being performed while applying a given voltage to an electrode of the electrostatic chuck and while a plasma is not generated in the plasma processing apparatus.

2. The method according to claim 1 , wherein the dechucking further comprises:

checking whether or not a value in accordance with remaining charge in the electrostatic chuck is not more than a predetermined threshold, while applying the given voltage to the electrode of the electrostatic chuck, and

determining that the processed object can be dechucked, in accordance with a result of the checking.

3. The method according to claim 2 , further comprising:

calculating a magnitude of the given voltage applied to the electrode of the electrostatic chuck, in accordance with a result of the determining.

4. The method according to claim 2 , wherein the value in accordance with remaining charge in the electrostatic chuck is a torque applied to the supporting mechanism when the processed object is to be lifted.

5. The method according to claim 2 , wherein the value in accordance with remaining charge in the electrostatic chuck is a magnitude of current flowing between the electrode and a DC power source connected to the electrode.

6. The method according to claim 2 , further comprising:

changing the given voltage applied to the electrode of the electrostatic chuck gradually, in a case in which the value in accordance with remaining charge in the electrostatic chuck is more than the predetermined threshold as the result of the checking, and

repeating the checking and the changing until the value in accordance with remaining charge in the electrostatic chuck becomes not more than the predetermined threshold.

7. The method according to claim 6 , wherein the given voltage applied to the electrode of the electrostatic chuck is calculated by referring to a storage unit storing a relationship between the given voltage applied to the electrode of the electrostatic chuck and a number of times of the repeating.

8. The method according to claim 7 , wherein, for each instance of the changing, the given voltage applied to the electrode of the electrostatic chuck is incremented or decremented by a predetermined value.

9. The method according to claim 7 , further comprising:

performing maintenance of the plasma processing apparatus for processing the processed object attracted to the electrostatic chuck electrostatically, in a case in which the number of times of the repeating exceeds a predetermined limit value.

10. A plasma processing apparatus comprising:

an electrostatic chuck configured to attract a processed object electrostatically;

a DC power source applying a voltage to an electrode of the electrostatic chuck; and

a control unit configured to dechuck the processed object by lifting the processed object with a supporting mechanism, while applying a given voltage to the electrode of the electrostatic chuck and while a plasma is not generated in the plasma processing apparatus.

11. The plasma processing apparatus according to claim 10 , wherein the control unit is configured

to perform a check as to whether or not a value in accordance with remaining charge in the electrostatic chuck is not more than a predetermined threshold, while applying the given voltage to the electrode of the electrostatic chuck, and

to perform a determination that the processed object can be dechucked, in accordance with a result of the check.

12. The plasma processing apparatus according to claim 11 , wherein the control unit is configured to calculate a magnitude of the given voltage applied to the electrode of the electrostatic chuck, in accordance with a result of the determination.