Method of reducing a sheet resistance in an electronic device, and an electronic device
Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.
1. An electronic device comprising:
a semiconductor chip comprising a multilayer structure comprising a semiconductor layer and a metallization layer over the semiconductor layer,
wherein the electronic device comprises a backside comprising at least one first portion that includes the metallization layer and at least one second portion,
wherein an absorption layer covers a backside of the at least one first portion and a reflection layer covers a back surface of the at least one second portion, the absorption layer to absorb more radiation and the reflective layer to absorb less radiation from a light source arranged such that the absorption layer is between the light source and the backside of the at least one first portion and the reflection layer is between the light source and a back surface of the at least one second portion,
wherein the at least one first portion and the at least one second portion were exposed to a different temperature during the manufacturing process of the electronic device.
2. The electronic device according to claim 1 , wherein the at least one second portion is formed by an encapsulation material.
3. The electronic device according to claim 1 , wherein the semiconductor layer has a thickness of less than 50 micrometer.
4. The electronic device according to claim 1 , wherein the metallization layer may comprising a material selected out of the group consisting of:
copper;
aluminum; and
a mixture thereof.
5. An electronic device comprising:
a chip having a front side, a backside, and lateral sides extending between the front side and backside;
an encapsulation material embedding the lateral sides of the chip and having a back surface facing in a same direction as the backside of the chip;
an absorption layer covering the backside of the chip; and
a reflection layer covering the back surface of the encapsulation material, the absorption layer to absorb more radiation and the reflection layer to absorb less radiation from a light source arranged such that the absorption layer is between the light source and the backside of the chip and the reflection layer is between the light source and the back surface of the encapsulation material, wherein the encapsulation material will be heated to a temperature less than that of material underlying the absorption layer in response to radiation from the light source.
6. The electronic device of claim 5 , including:
a metallization layer on the backside of the chip between the chip backside and the absorption layer.
7. The electronic device of claim 6 , including:
a diffusion region between the metallization layer and a material of the chip on the backside thereof.
8. The electronic device of claim 6 , a barrier layer disposed between the metallization layer and the chip.
9. The electronic device of claim 8 , the barrier layer comprising titanium.
10. The electronic device of claim 9 , the absorption layer comprising TiN.
11. The electronic device of claim 5 , the absorption layer comprising black copper.
12. The electronic device of claim 5 , the reflection layer comprising aluminum.
13. The electronic device of claim 5 , the reflection layer comprising copper.