Light emitting device that is highly reliable, thin and is not damaged by external local pressure and electronic device
An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
1. A light emitting device comprising:
a first layer comprising any one of an aramid resin, a polyethylene naphthalate resin, a polyphenylene sulfide resin, a polyimide resin, and a polyethylene terephthalate resin;
a first insulating layer over the first layer;
a transistor over the first insulating layer;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening;
a third insulating layer over the wiring, the third insulating layer comprising a second opening;
a first electrode over the third insulating layer, the first electrode electrically connected to the wiring through the second opening;
an EL layer over the first electrode;
a second electrode over the EL layer; and
a fourth insulating layer over the second electrode,
wherein the fourth insulating layer and the second insulating layer are in contact with each other.
2. The light emitting device according to claim 1 , wherein the first layer is a film having rubber elasticity in which a modulus of elasticity is higher than or equal to 5 GPa and less than or equal to 12 GPa and a modulus of rupture is higher than or equal to 300 MPa.
3. The light emitting device according to claim 1 , wherein the first layer is an impact relief layer.
4. The light emitting device according to claim 1 , further comprising a second layer over the fourth insulating layer,
wherein the second layer comprises any one of an aramid resin, a polyethylene naphthalate resin, a polyphenylene sulfide resin, a polyimide resin, and a polyethylene terephthalate resin.
5. The light emitting device according to claim 1 ,
wherein the first insulating layer and the second insulating layer are in contact with each other, and
wherein the fourth insulating layer and the second insulating layer are in contact with each other.
6. The light emitting device according to claim 1 , further comprising:
a second layer over the fourth insulating layer;
a first structure body comprising a first organic resin, between the first layer and the first insulating layer; and
a second structure body comprising a second organic resin, between the second layer and the fourth insulating layer.
7. The light emitting device according to claim 6 , wherein the first organic resin and the second organic resin are in contact with each other.
8. The light emitting device according to claim 6 , wherein the first insulating layer and the first organic resin are in contact with each other.
9. The light emitting device according to claim 6 , wherein the fourth insulating layer and the second organic resin are in contact with each other.
10. A light emitting device comprising:
a first layer comprising any one of an aramid resin, a polyethylene naphthalate resin, a polyphenylene sulfide resin, a polyimide resin, and a polyethylene terephthalate resin;
a first insulating layer over the first layer;
a transistor over the first insulating layer;
a second insulating layer over the transistor, the second insulating layer comprising a first opening;
a wiring over the second insulating layer, the wiring electrically connected to the transistor through the first opening;
a third insulating layer comprising nitride of silicon over the wiring, the third insulating layer comprising a second opening;
a first electrode over the third insulating layer, the first electrode electrically connected to the wiring through the second opening;
an EL layer over the first electrode;
a second electrode over the EL layer; and
a fourth insulating layer over the second electrode,
wherein the fourth insulating layer and the first insulating layer are in contact with each other, and
wherein the fourth insulating layer and the second insulating layer are in contact with each other.
11. The light emitting device according to claim 10 , wherein the first layer is a film having rubber elasticity in which a modulus of elasticity is higher than or equal to 5 GPa and less than or equal to 12 GPa and a modulus of rupture is higher than or equal to 300 MPa.
12. The light emitting device according to claim 10 , wherein the first layer is an impact relief layer.
13. The light emitting device according to claim 10 , further comprising a second layer over the fourth insulating layer,
wherein the second layer comprises any one of an aramid resin, a polyethylene naphthalate resin, a polyphenylene sulfide resin, a polyimide resin, and a polyethylene terephthalate resin.
14. The light emitting device according to claim 10 ,
wherein the first insulating layer and the second insulating layer are in contact with each other, and
wherein the fourth insulating layer and the second insulating layer are in contact with each other.
15. The light emitting device according to claim 10 , further comprising a second layer over the fourth insulating layer,
wherein a first organic resin is provided between the first layer and the first insulating layer,
wherein a second organic resin is provided between the second layer and the fourth insulating layer, and
wherein the first organic resin and the second organic resin are in contact with each other.
16. The light emitting device according to claim 15 , wherein the first insulating layer and the first organic resin are in contact with each other.
17. The light emitting device according to claim 15 , wherein the fourth insulating layer and the second organic resin are in contact with each other.