Semiconductor chip and manufacturing method thereof
A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.
1. A semiconductor chip, comprises:
a substrate;
a transistor formed on the substrate and comprising:
an insulation layer; and
a plurality of fins each comprising a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion, the fins comprise a plurality of edge fins, and the protrusion of each edge fin has a recess recessed with respect to the upper surface of the base portion of the corresponding edge fin.
2. The semiconductor chip according to claim 1 , wherein the recess has a curved bottom surface.
3. The semiconductor chip according to claim 2 , wherein the recess further has a lateral surface connecting the curved bottom surface with the upper surface and is perpendicular to the upper surface.
4. The semiconductor chip according to claim 2 , wherein the curved bottom surface directly extends to the upper surface.
5. The semiconductor chip according to claim 1 , wherein the protrusion of each fin has an upper surface, and a width of the upper surface of the protrusion of each fin is substantially is equal.
6. The semiconductor chip according to claim 1 , comprising a plurality of the transistors comprising a first transistor and a second transistor, wherein the number of the fins of the first transistor is one, the number of the fins of the second transistor is plural, a width of the protrusion of each fin of the first transistor is as thin as a width of the protrusion of each fin of the second transistor.
7. A semiconductor chip, comprises:
a substrate;
a transistor formed on the substrate and comprising:
an insulation layer; and
a plurality of fins each comprising a base portion and a protrusion connected with the corresponding base portion, wherein the protrusions are projected with respect to the base portions and the insulation layer, each protrusion has an upper surface, and a width of the upper surface of each protrusion is substantially is equal;
wherein the fins comprise a plurality of edge fins, and the protrusion of each edge fin has a recess recessed with respect to the upper surface of the base portion of the corresponding edge fin.
8. The semiconductor chip according to claim 7 , comprising a plurality of the transistors comprising a first transistor and a second transistor, wherein the number of the fins of the first transistor is one, the number of the fins of the second transistor is plural, and a width of the upper surface of the protrusion of the first transistor is as thin as a width of the upper surface of each protrusion of the second transistor.
9. The semiconductor chip according to claim 7 , wherein each recess has a curved bottom surface.
10. The semiconductor chip according to claim 7 , wherein each recess further has a lateral surface connecting the curved bottom surface with the upper surface of the base portion of the corresponding edge fin and is perpendicular to the upper surface of the base portion of the corresponding edge fin.
11. The semiconductor chip according to claim 9 , wherein the curved bottom surface directly extends to the upper surface of the base portion of the corresponding edge fin.
12. The semiconductor chip according to claim 7 , wherein the fins further comprise an inner fin located between the edge fins.