IP Library Granted Patent US 12,018,382
Granted Patent B2
US 12,018,382 · App. 16/123,149 · Granted Jun 25, 2024

Coatings for enhancement of properties and performance of substrate articles and apparatus

Inventors: Bryan C. Hendrix (Danbury, CT); David W. Peters (Kingsland, TX); Weimin Li (New Milford, CT); Carlo Waldfried (Middleton, MN); Richard A. Cooke (Framingham, MA); Nilesh Gunda (North Chelmsford, MA); I-Kuan Lin (Bedford, MA)
Assignee: ENTEGRIS, INC.
C23C28/044B01D39/2027B01D67/00C23C14/243C23C14/50C23C16/042C23C16/403C23C16/404C23C16/405C23C16/4404C23C16/4412C23C16/45525C23C16/45555C23C16/56C23C28/042B01D2239/0478B01D2239/1216
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Quick Facts
Patent No.
US 12,018,382
App. No.
16/123,149
Granted
Jun 25, 2024
Kind
B2
Abstract

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Claims (6)

1. A method of forming a patterned ALD coating on a substrate part, said method comprising:

uniformly coating the part with an ALD coating of aluminum oxide having a thickness in a range from 5 nm to 5 μm;

masking an area of the ALD coating of the coated part with a non-coating physical mask comprising a sealed sheet or fixture; and

etching back unwanted coating material through the physical mask, wherein the substrate part is a component of semiconductor manufacturing equipment, the substrate part is stainless steel, and the substrate part comprises at least one high aspect ratio feature selected from the group consisting of holes, channels, 3-dimensional features, hardware, screws, nuts, porous membranes, filters, 3-dimensional network structures, and structures with connected pore matrices.

2. The method of claim 1 , wherein the etching back comprises an operation selected from the group consisting of mechanical treatment, bead blast, physical treatment, plasma ion treatment, chemical treatment, plasma etch, and wet etch.

3. The method of claim 1 , wherein the ALD coating of aluminum oxide has a thickness in a range of 20 nm to 125 nm.

Assignments (4)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Recorded Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2018
From: HENDRIX, BRYAN C.; PETERS, DAVID W.; LI, WEIMIN; WALDFRIED, CARLO; COOKE, RICHARD A.; GUNDA, NILESH; LIN, I-KUAN
To: ENTEGRIS, INC.
Reel/Frame 047739/0751 →
SECURITY INTEREST Recorded Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →